NTD110N02RT4G ON Semiconductor

NTD110N02R, STD110N02R MOSFET Power, N-Channel, DPAK 24 V, 110 A Features NTD110N02R, STD110N02R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V (BR)DSS (V = 0 V, I = 250 A) 24 28 GS D Positive Temperature Coefficient 15 mV/C Zero Gate Voltage Drain Current I A DSS (V = 20 V, V = 0 V) DS GS 1.5 (V = 20 V, V = 0 V, T = 125C) DS GS J 10 GateBody Leakage Current (V = 20 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V V GS(th) (V = V , I = 250 A) 1.0 1.5 2.0 DS GS D Negative Threshold Temperature Coefficient 5.0 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 V, I = 110 A) 4.1 GS D (V = 4.5 V, I = 55 A) GS D 5.5 (V = 10 V, I = 20 A) GS D 3.9 4.6 (V = 4.5 V, I = 20 A) GS D 5.5 6.2 Forward Transconductance (V = 10 V, I = 15 A) (Note 3) g 44 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 2710 3440 pF iss Output Capacitance C 1105 1670 (V = 20 V, V = 0 V, f = 1.0 MHz) oss DS GS Transfer Capacitance C 450 640 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 22 ns d(on) Rise Time t 39 80 r (V = 10 V, V = 10 V, GS DD I = 40 A, R = 3.0 ) D G TurnOff Delay Time t 27 40 d(off) Fall Time t 21 40 f Gate Charge Q 23.6 28 nC T (V = 4.5 V, I = 40 A, GS D Q 5.1 GS V = 10 V) (Note 3) DS Q 11 GD SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V 0.82 1.2 V (I = 20 A, V = 0 V) (Note 3) SD S GS (I = 55 A, V = 0 V) 0.99 S GS (I = 20 A, V = 0 V, T = 125C) S GS J 0.65 Reverse Recovery Time ns t 36.5 rr (I = 30 A, V = 0 V, S GS t 30 a dI /dt = 100 A/ s) (Note 3) S t 25 b Reverse Recovery Stored Charge Q 0.048 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.