NTMFS4922NE Power MOSFET 30 V, 147 A, Single NChannel, SO8 FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4922NE THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.8 JC JunctiontoAmbient Steady State (Note 3) R 46.0 JA JunctiontoAmbient Steady State (Note 4) R 134.2 C/W JA JunctiontoAmbient (t 10 s) (Note 3) R 17.3 JA Junction toTop R 8.0 JT 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 15.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I T = 25C 1.0 DSS J V = 0 V, GS A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.6 2.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.45 2.0 DS(on) GS D I = 15 A 1.45 D m V = 4.5 V I = 30 A 2.2 3.0 GS D I = 15 A 2.2 D Forward Transconductance g V = 1.5 V, I = 15 A 80 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 5505 ISS Output Capacitance C 2355 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 90 RSS Total Gate Charge Q 34 G(TOT) Threshold Gate Charge Q 3.8 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 13.9 GS GatetoDrain Charge Q 8.1 GD Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 76.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 20.0 d(ON) Rise Time t 36.2 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G Turn Off Delay Time t 39.3 d(OFF) Fall Time t 9.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.