NTMFS4925NE Power MOSFET 30 V, 48 A, Single NChannel, SO8 FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NTMFS4925NE THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 5.4 JC JunctiontoAmbient Steady State (Note 3) R 46.3 JA JunctiontoAmbient Steady State (Note 4) R 136.2 C/W JA JunctiontoAmbient (t 10 s) (Note 3) R 20.3 JA Junction toTop R 10.2 JT 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 21 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.0 6.0 DS(on) GS D I = 15 A 4.0 D m V = 4.5 V I = 30 A 6.4 10 GS D I = 15 A 6.3 D Forward Transconductance g V = 1.5 V, I = 15 A 52 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1264 ISS Output Capacitance C 483 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 143 RSS Total Gate Charge Q 10.8 G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 3.8 GS GatetoDrain Charge Q 4.2 GD Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 21.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.5 d(ON) Rise Time t 32.7 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 16.4 d(OFF) Fall Time t 6.2 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.