NTMFS4935N Power MOSFET 30 V, 93 A, Single NChannel, SO8 FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NTMFS4935N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 2.6 JC JunctiontoAmbient Steady State (Note 3) R 47.5 JA C/W JunctiontoAmbient Steady State (Note 4) R 134.8 JA JunctiontoAmbient (t 10 s) (Note 3) R 14.4 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 19.5 A, 34 V (BR)DSSt GS D(aval) (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 15 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.63 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.7 3.2 DS(on) GS D I = 15 A 2.7 D m V = 4.5 V I = 30 A 3.7 4.2 GS D I = 15 A 3.7 D Forward Transconductance g V = 1.5 V, I = 15 A 32 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3579 4850 ISS Output Capacitance C 1264 1710 OSS V = 0 V, f = 1 MHz, V = 15 V pF GS DS Reverse Transfer Capacitance C 39 59 RSS Capacitance Ratio C / V = 0 V, f = 1 MHz, V = 15 V 0.011 0.022 RSS GS DS C ISS Total Gate Charge Q 22 G(TOT) Threshold Gate Charge Q 5.6 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 10.2 GS GatetoDrain Charge Q 3.0 GD Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 49.4 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 16.3 d(ON) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 27.5 d(OFF) Fall Time t 6.6 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.