Product Information

NTMFS4946NT1G

NTMFS4946NT1G electronic component of ON Semiconductor

Datasheet
MOSFET NFET SO8FL 30V TR
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1500
Multiples : 1500

Stock Image

NTMFS4946NT1G
ON Semiconductor

1500 : USD 0.4234
4500 : USD 0.3969
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

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NTMFS4946NT1G
ON Semiconductor

3000 : USD 0.4599
N/A

Obsolete
0 - WHS 3

MOQ : 803
Multiples : 803

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NTMFS4946NT1G
ON Semiconductor

803 : USD 0.5408
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

NTMFS4946NT1G
ON Semiconductor

1 : USD 2.8582
10 : USD 1.073
100 : USD 0.8024
500 : USD 0.6635
1000 : USD 0.5236
1500 : USD 0.5065
N/A

Obsolete
0 - WHS 5

MOQ : 20
Multiples : 1

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NTMFS4946NT1G
ON Semiconductor

20 : USD 0.3424
25 : USD 0.3255
100 : USD 0.3065
250 : USD 0.3004
N/A

Obsolete
0 - WHS 6

MOQ : 1500
Multiples : 1500

Stock Image

NTMFS4946NT1G
ON Semiconductor

1500 : USD 0.3788
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

NTMFS4946N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 100 A Low R to Minimize Conduction Losses DS(on) NTMFS4946N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche EAS 205 mJ Energy (V = 50 V, V = 10 V, DD GS I = 37 A , L = 0.3 mH, R = 25 L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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