NTMFS4H02NT1G ON Semiconductor

NTMFS4H02N Power MOSFET 25 V, 193 A, Single NChannel, SO8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances NTMFS4H02N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 18.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 DSS GS J A V = 20 V DS T = 125C 20 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.1 1.4 DS(on) GS D m V = 4.5 V I = 30 A 1.7 2.2 GS D Forward Transconductance g V = 12 V, I = 15 A 84 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2651 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 12 V 1814 pF OSS GS DS Reverse Transfer Capacitance C 103 RSS Total Gate Charge Q 18 G(TOT) Threshold Gate Charge Q 2.7 G(TH) V = 4.5 V, V = 12 V I = 30 A nC GS DS D GatetoSource Charge Q 7.2 GS GatetoDrain Charge Q 4.2 GD Total Gate Charge Q V = 10 V, V = 12 V I = 30 A 38.5 nC G(TOT) GS DS D Gate Resistance R T = 25C 1.0 2 G A SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5) GS TurnOn Delay Time t 13.1 d(ON) Rise Time t 20 r V = 4.5 V, V = 12 V, I = 15 A, GS DD D ns R = 3.0 G TurnOff Delay Time t 22.2 d(OFF) Fall Time t 9.1 f SWITCHING CHARACTERISTICS, V = 10 V (Note 5) GS TurnOn Delay Time t 9.5 d(ON) Rise Time t 18.5 r V = 10 V, V = 12 V, GS DD ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 30.3 d(OFF) Fall Time t 5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.56 J Reverse Recovery Time t 46.3 RR Charge Time t 23.9 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 22.4 b Reverse Recovery Charge Q 51 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.