NTLUS4C12N MOSFET Power, Single, N-Channel, Cool, UDFN6, 2.0x2.0x0.55 mm 30 V, 10.7 A www.onsemi.com Features MOSFET Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with Exposed Drain Pads for Excellent Thermal Conduction V R MAX I MAX (BR)DSS DS(on) D Ultra Low R to Reduce Conduction Losses DS(on) 9 m 10 V Optimized Gate Charge to Reduce Switching Losses 12 m 4.5 V 30 V 10.7 A Low Capacitance to Minimize Driver Losses 15 m 3.7 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 19 m 3.3 V Compliant Applications D Power Load Switch Synch DCDC Converters Wireless Charging Circuit G MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S Drain-to-Source Voltage V 30 V DSS NCHANNEL MOSFET Gate-to-Source Voltage V 20 V GS S MARKING DIAGRAM Continuous Drain Steady I A T = 25C 10.7 A D Current (Note 1) State D 1 T = 85C 7.7 A UDFN6 AGM ( COOL ) t 5 s T = 25C 15.1 A CASE 517BG Pin 1 Power Dissipa- Steady T = 25C P 1.54 W A D AG = Specific Device Code tion (Note 1) State M = Date Code t 5 s T = 25C 3.1 A = PbFree Package Continuous Drain Steady T = 25C I 6.8 A (Note: Microdot may be in either location) A D Current (Note 2) State T = 85C 4.9 A PIN CONNECTIONS Power Dissipation (Note 2) T = 25C P 0.63 W A D Pulsed Drain Current t = 10 s I 43 A p DM MOSFET Operating Junction and Storage T , -55 to C J D 1 6 D Temperature T 150 STG D Source Current (Body Diode) (Note 1) I 1.55 A S D 2 5 D Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) G 3 4 S Stresses exceeding those listed in the Maximum Ratings table may damage the S device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq (Top View) 2 oz including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 1 NTLUS4C12N/DNTLUS4C12N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 81 JA Junction-to-Ambient t 5 s (Note 3) R 40.5 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 200 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 12 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.3 2.1 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 4.8 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 10 V, I = 9.0 A 7.2 9 DS(on) GS D V = 4.5 V, I = 8.0 A 9.3 12 GS D V = 3.7 V, I = 5.0 A 10.9 15 GS D V = 3.3 V, I = 5.0 A 13 19 GS D Forward Transconductance g V = 15 V, I = 9.0 A 39 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 1172 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 546 OSS V = 15 V DS Reverse Transfer Capacitance C 26 RSS nC Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 15 V GS DS I = 8.0 A D Gate-to-Source Charge Q 3.0 GS Gate-to-Drain Charge Q 2.2 GD Total Gate Charge Q V = 10 V, V = 15 V 18 nC G(TOT) GS DS I = 9.0 A D SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 9.4 d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 8.0 A, R = 3 D G Turn-Off Delay Time t 14 d(OFF) Fall Time t 3.5 f SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) ns Turn-On Delay Time t 6.3 d(ON) Rise Time t 14 r V = 10 V, V = 15 V, GS DD I = 9.0 A, R = 3 D G Turn-Off Delay Time t 18 d(OFF) Fall Time t 2.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2