The NTMS4916NR2G is a MOSFET N-channel FET (field effect transistor) with an SO8 package from ON Semiconductor. It features a 30V maximum drain-source voltage, an 11.4A maximum drain current and a 9mohm maximum on-resistance. This FET is highly reliable and is designed to provide the performance and ease of use for a variety of applications. It provides very low on-resistance, fast switching, low input and output capacitance, and high immunity to noise, power supply variations, and ESD. It also has low gate charge and low leakage current, making it an ideal device for a wide range of applications.