NTMS5P02R2G ON Semiconductor

NTMS5P02R2G electronic component of ON Semiconductor
NTMS5P02R2G ON Semiconductor
NTMS5P02R2G MOSFETs
NTMS5P02R2G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTMS5P02R2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMS5P02R2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTMS5P02R2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET -20V -5.4A P-Channel
Datasheet: NTMS5P02R2G Datasheet (PDF)
Price (USD)
1: USD 1.3671 ea
Line Total: USD 1.37 
Availability : 1751
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 1.3671
10$ 0.7931
100$ 0.5527
500$ 0.4744
1000$ 0.4381
2500$ 0.4029
5000$ 0.3859
10000$ 0.3756

Availability 1751
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3671
10$ 0.7931
100$ 0.5527
500$ 0.4744
1000$ 0.4381
2500$ 0.4029
5000$ 0.3859
10000$ 0.3756


Availability 2425
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 742
Multiples : 1
QtyUnit Price
742$ 0.6525
1000$ 0.6018
10000$ 0.5365
100000$ 0.4495


Availability 20058
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 742
Multiples : 1
QtyUnit Price
742$ 0.6525
1000$ 0.6018
10000$ 0.5365
100000$ 0.4495


Availability 4166
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 742
Multiples : 1
QtyUnit Price
742$ 0.6525
1000$ 0.6018
10000$ 0.5365
100000$ 0.4495


Availability 46075
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMS5P02R2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMS5P02R2G and other electronic components in the MOSFETs category and beyond.

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NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V NTMS5P02, NVMS5P02 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage V 20 V DSS DraintoGate Voltage (R = 1.0 m ) V 20 V GS DGR GatetoSource Voltage Continuous V 10 V GS Thermal Resistance JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Continuous Drain Current 25C 7.05 A I D Continuous Drain Current 70C I 5.62 A D Maximum Operating Power Dissipation P 1.2 W D Maximum Operating Drain Current I 4.85 A D Pulsed Drain Current (Note 4) I 28 A DM Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Continuous Drain Current 25C I 5.40 A D Continuous Drain Current 70C I 4.30 A D Maximum Operating Power Dissipation P 0.7 W D Maximum Operating Drain Current I 3.72 A D Pulsed Drain Current (Note 4) I 20 A DM Thermal Resistance JunctiontoAmbient (Note 3) R 159 C/W JA Total Power Dissipation T = 25C P 0.79 W A D Continuous Drain Current 25C I 3.95 A D Continuous Drain Current 70C I 3.15 A D Maximum Operating Power Dissipation P 0.38 W D Maximum Operating Drain Current I 2.75 A D Pulsed Drain Current (Note 4) 12 A I DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 360 mJ J AS (V = 20 Vdc, V = 5.0 Vdc, Peak I = 8.5 Apk, L = 10 mH, R = 25 ) DD GS L G Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t 10 seconds. 2. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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