Product Information

NTSB30100S-1G

NTSB30100S-1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers LVFR 30A 100V IN I2PAK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2483 ea
Line Total: USD 1.25

44 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
44 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

NTSB30100S-1G
ON Semiconductor

1 : USD 1.288
10 : USD 1.0718
100 : USD 0.8499
500 : USD 0.713
900 : USD 0.6199
2700 : USD 0.5934
5400 : USD 0.5934
10800 : USD 0.5842
25200 : USD 0.5681

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier NTST30100SG, NTSB30100S1G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 30 A F(AV) (Rated V , T = 105C) R C Peak Repetitive Forward Current I 60 A FRM (Rated V , Square Wave, 20 kHz, T = 95C) R C Nonrepetitive Peak Surge Current I 250 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R 2.0 JC JunctiontoAmbient R 70 JA ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.47 F J (I = 10 A, T = 25C) 0.55 F J (I = 30 A, T = 25C) 0.84 0.95 F J (I = 5 A, T = 125C) 0.39 F J (I = 10 A, T = 125C) 0.51 F J (I = 30 A, T = 125C) 0.7 0.78 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 27 A R J (V = 70 V, T = 125C) 11 mA R J (Rated dc Voltage, T = 25C) 70 1000 A J (Rated dc Voltage, T = 125C) 23 45 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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