Product Information

NTTFD9D0N06HLTWG

NTTFD9D0N06HLTWG electronic component of ON Semiconductor

Datasheet
MOSFET T8 60V DFN POWER CLIP 3X3 DUAL SYMMETRICAL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7097 ea
Line Total: USD 2.71

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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NTTFD9D0N06HLTWG
ON Semiconductor

1 : USD 2.7097
10 : USD 1.0089
100 : USD 0.8115
500 : USD 0.7404
1000 : USD 0.6473
3000 : USD 0.617
9000 : USD 0.617
24000 : USD 0.6112
45000 : USD 0.5937

     
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MOSFET - Symmetrical Dual N-Channel 60 V, 9 m , 38 A NTTFD9D0N06HL General Description This device includes two specialized NChannel MOSFETs in www.onsemi.com a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed V R MAX I MAX (BR)DSS DS(ON) D to provide optimal power efficiency. 9 m 10 V 60 V 38 A Features 13 m 4.5 V Q1: NChannel Max r = 9.0 m at V = 10 V, I = 10 A DS(on) GS D ELECTRICAL CONNECTION Max r = 13 m at V = 4.5, I = 8.0 A DS(on) GS D GND SW GND SW Q2: NChannel GND SW SW LSG LSG Max r = 9.0 m at V = 10 V, I = 10 A DS(on) GS D V+ V+ SW SW Max r = 13 m at V = 4.5, I = 8.0 A V+ DS(on) GS D V+ HSG V+ HSG Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses Dual N-Channel MOSFET RoHS Compliant PIN1 Typical Applications Computing Communications General Purpose Point of Load PIN1 Bottom Top PIN DESCRIPTION WQFN12, 3x3 CASE 510CJ Pin Name Description 1, 11, 12 GND (LSS) Low Side Source MARKING DIAGRAM 2 LSG Low Side Gate 3, 4, 5, 6 V + (HSD) High Side Drain D9D0 7 HSG High Side Gate AYWWZZ 8, 9, 10 SW Switching Node, Low Side Drain D9D0 = Specific Device Code A = Assembly Plant Code Y = Numeric Year Code WW = Work Week Code ZZ = Assembly Lot Code ORDERING INFORMATION Device Package Shipping NTTFD9D0N06HLTWG WQFN12 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2020 Rev. 1 NTTFD9D0N06HL/DNTTFD9D0N06HL MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Q1 Q2 Units V DraintoSource Voltage 60 60 V DS V GatetoSource Voltage 20 20 V GS I Drain Current Continuous T = 25C (Note 4) 38 38 A D C Continuous T = 100C (Note 4) 23 23 C Continuous T = 25C 9 (Note 1a) 9 (Note 1b) A Pulsed T = 25C 349 349 A E Single Pulse Avalanche Energy (Note 3) 46 46 mJ AS P Power Dissipation for Single Operation T = 25C 26 26 W D C Power Dissipation for Single Operation T = 25C 1.7 (Note 1a) 1.7 (Note 1b) A T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Q1 Q2 Units R Thermal Resistance, JunctiontoCase 4.8 4.8 C/W JC R Thermal Resistance, JunctiontoAmbient (Note 1a), max copper 70 (Note 1a) 70 (Note 1b) JA Thermal Resistance, JunctiontoAmbient (Note 1c), min copper 135 (Note 1a) 135 (Note 1b) R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV DraintoSource Breakdown Voltage Q1 60 V I = 250 A, V = 0 V DSS D GS I = 250 A, V = 0 V Q2 60 D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C Q1 37.38 mV/C BV D DSS Coefficient T J I = 250 A, referenced to 25C Q2 37.38 D I Zero Gate Voltage Drain Current V = 60 V, V = 0 V Q1 10 A DSS DS GS V = 60 V, V = 0 V Q2 10 DS GS I GatetoSource Leakage Current, V = +20/16 V, V = 0 V Q1 100 nA GSS GS DS Forward V = +20/16 V, V = 0 V Q2 100 GS DS ON CHARACTERISTICS V GatetoSource Threshold Voltage V = V , I = 50 A Q1 1.2 1.6 2.0 V GS(th) GS DS D V = V , I = 50 A Q2 1.2 1.6 2.0 GS DS D GatetoSource Threshold Voltage Q1 6.19 mV/C I = 50 A, referenced to 25C V D GS(th) Temperature Coefficient T I = 50 A, referenced to 25C Q2 6.19 J D r DraintoSource On Resistance V = 10 V, I = 10 A Q1 7.3 9.0 m DS(on) GS D V = 4.5 V, I = 8 A 9.8 13 GS D V = 10 V, I = 10 A, T = 125C 12.7 GS D J r DraintoSource On Resistance V = 10 V, I = 10 A Q2 7.3 9.0 m DS(on) GS D V = 4.5 V, I = 8 A 9.8 13 GS D V = 10 V, I = 10 A, T = 125C 12.7 GS D J g Forward Transconductance V = 15 V, I = 10 A Q1 53 S FS DS D V = 15 V, I = 10 A Q2 53 DS D www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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