EEPROM Serial 512-Kb SPI Automotive Grade 1 in Wettable Flank UDFN-8 Package NV25512MUW www.onsemi.com Description The NV25512 is a EEPROM Serial 512Kb SPI Automotive Grade 1 device internally organized as 64Kx8 bits. This features a 128byte page write buffer and supports the Serial Peripheral 1 Interface (SPI) protocol. The device is enabled through a Chip Select UDFN8 (CS) input. In addition, the required bus signals are clock input (SCK), (Wettable Flank) data input (SI) and data output (SO) lines. The HOLD input may be MUW3 SUFFIX used to pause any serial communication with the NV25512 device. CASE 517DH The device features software and hardware write protection, including partial as well as full array protection. OnChip ECC (Error Correction Code) makes the device suitable PIN CONFIGURATION for high reliability applications. Features V CS 1 CC SO HOLD Automotive AECQ100 Grade 1 (40C to +125C) Qualified WP SCK 10 MHz SPI Compatible V SI SS 1.8 V to 5.5 V Supply Voltage Range UDFN8 (MUW3) SPI Modes (0,0) & (1,1) (Top View) 128byte Page Write Buffer Additional Identification Page with Permanent Write Protection PIN FUNCTION Selftimed Write Cycle Pin Name Function Hardware and Software Protection CS Chip Select Block Write Protection 1 1 Protect / , / or Entire EEPROM Array SO Serial Data Output 4 2 Low Power CMOS Technology WP Write Protect 1,000,000 Program/Erase Cycles V Ground SS 100 Year Data Retention SI Serial Data Input Wettable Flank UDFN 8pad Package SCK Serial Clock This Device is PbFree, Halogen Free/BFR Free, and RoHS HOLD Hold Transmission Input Compliant V Power Supply CC V CC ORDERING INFORMATION SI See detailed ordering and shipping information in the package CS dimensions section on page 10 of this data sheet. NV25512 SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2020 Rev. 4 NV25512MUW/DNV25512MUW Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, SO open, f = 10 MHz 3 mA CCR SCK I Supply Current (Write Mode) Write, CS = V 2 mA CCW CC I Standby Current V = GND or V , CS = V , WP = V , 3 A SB1 IN CC CC CC HOLD = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , WP = GND, 5 A SB2 IN CC CC HOLD = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage V 2.5 V 0.5 0.3V V IL1 CC CC V Input High Voltage V 2.5 V 0.7V V + 0.5 V IH1 CC CC CC V Input Low Voltage V < 2.5 V 0.5 0.25V V IL2 CC CC V Input High Voltage V < 2.5 V 0.75V V + 0.5 V IH2 CC CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8V V OH OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2