NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 m , Single NChannel Features Low R DS(on) Low Capacitance NTMFS5834NL, NVMFS5834NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 34.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 7.1 9.3 DS(on) GS D m V = 4.5 V I = 20 A 11.3 13.6 GS D Forward Transconductance g V = 5 V, I = 20 A 29 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1231 ISS Output Capacitance C 198 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 141 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 20 A 24 G(TOT) GS DS D Total Gate Charge Q 12 G(TOT) Threshold Gate Charge Q 1.0 nC G(TH) GatetoSource Charge Q 4.2 V = 4.5 V, V = 20 V I = 20 A GS GS DS D GatetoDrain Charge Q 6.3 GD Plateau Voltage V 3.4 V GP Gate Resistance R 0.7 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10 d(ON) Rise Time t 56.4 r V = 4.5 V, V = 20 V, GS DS ns I = 20 A, R = 2.5 D G TurnOff Delay Time t 17.4 d(OFF) Fall Time t 6.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.72 J Reverse Recovery Time t 18 RR Charge Time t 10 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 20 A S Discharge Time t 8.0 b Reverse Recovery Charge Q 11 nC RR 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.