X-On Electronics has gained recognition as a prominent supplier of NVMFS5C673NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5C673NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5C673NLT1G ON Semiconductor

NVMFS5C673NLT1G electronic component of ON Semiconductor
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Part No.NVMFS5C673NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 6 60V NFET
Datasheet: NVMFS5C673NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.3975 ea
Line Total: USD 596.25 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1479
10 : USD 1.2192

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.3975

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Factory Pack Quantity :
Configuration
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVMFS5C673NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5C673NLT1G and other electronic components in the MOSFETs category and beyond.

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DATA SHEET www.onsemi.com MOSFET Power, Single V R MAX I MAX (BR)DSS DS(ON) D N-Channel, DFN5/DFNW5 9.2 m 10 V 60 V 50 A 13 m 4.5 V 60 V, 9.2 m , 50 A NVMFS5C673NL D (5) Features Small Footprint (5x6 mm) for Compact Design G (4) Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFS5C673NLWF Wettable Flank Option for Enhanced Optical S (1,2,3) Inspection NCHANNEL MOSFET AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MARKING MAXIMUM RATINGS (T = 25C unless otherwise noted) J DIAGRAM Parameter Symbol Value Unit DFN5 D CASE 488AA S D DraintoSource Voltage V 60 V DSS 1 XXXXXX S GatetoSource Voltage V 20 V GS AYWZZ S DFNW5 G D Continuous Drain T = 25C I 50 A D CASE 507BA C Current R D JC T = 100C 35 (Notes 1, 3) C Steady XXXXXX = 5C673L State Power Dissipation P W T = 25C 46 C D XXXXXX = (NVMFS5C673NL) or R (Note 1) JC XXXXXX = 673LWF T = 100C 23 C XXXXXX = (NVMFS5C673NLWF) Continuous Drain T = 25C I 14 A A D A = Assembly Location Current R JA Y = Year T = 100C 10 (Notes 1, 2, 3) A Steady W = Work Week State Power Dissipation T = 25C P 3.6 W ZZ = Lot Traceability A D R (Notes 1 & 2) JA T = 100C 1.8 A Pulsed Drain Current T = 25C, t = 10 s I 290 A DM A p ORDERING INFORMATION Operating Junction and Storage Temperature T , T 55 to C J stg See detailed ordering, marking and shipping information in the + 175 package dimensions section on page 5 of this data sheet. Source Current (Body Diode) I 52 A S Single Pulse DraintoSource Avalanche E 88 mJ AS Energy (I = 2.3 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 3.2 C/W JC JunctiontoAmbient Steady State (Note 2) R 42 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2021 Rev. 3 NVMFS5C673NL/DNVMFS5C673NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 28 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 35 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 25 A 7.7 9.2 DS(on) GS D m V = 4.5 V I = 25 A 11 13 GS D Forward Transconductance g V =15 V, I = 25 A 37 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 880 ISS Output Capacitance C 450 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 25 A 4.5 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 25 A 9.5 nC G(TOT) GS DS D Threshold Gate Charge Q 1.0 G(TH) GatetoSource Charge Q 2.0 nC GS V = 10 V, V = 48 V I = 25 A GS DS D GatetoDrain Charge Q 0.8 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 6.0 d(ON) Rise Time t 25 r V = 10 V, V = 48 V, GS DS ns I = 25 A, R = 2.5 D G TurnOff Delay Time t 16 d(OFF) Fall Time t 2.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 25 A S T = 125C 0.8 J Reverse Recovery Time t 28 RR Charge Time t 14 ns a V = 0 V, dIs/dt = 100 A/ s, GS I = 25 A S Discharge Time t 14 b Reverse Recovery Charge Q 18 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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