DATA SHEET www.onsemi.com MOSFET Power, Single V R MAX I MAX (BR)DSS DS(ON) D N-Channel, DFN5/DFNW5 9.2 m 10 V 60 V 50 A 13 m 4.5 V 60 V, 9.2 m , 50 A NVMFS5C673NL D (5) Features Small Footprint (5x6 mm) for Compact Design G (4) Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFS5C673NLWF Wettable Flank Option for Enhanced Optical S (1,2,3) Inspection NCHANNEL MOSFET AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MARKING MAXIMUM RATINGS (T = 25C unless otherwise noted) J DIAGRAM Parameter Symbol Value Unit DFN5 D CASE 488AA S D DraintoSource Voltage V 60 V DSS 1 XXXXXX S GatetoSource Voltage V 20 V GS AYWZZ S DFNW5 G D Continuous Drain T = 25C I 50 A D CASE 507BA C Current R D JC T = 100C 35 (Notes 1, 3) C Steady XXXXXX = 5C673L State Power Dissipation P W T = 25C 46 C D XXXXXX = (NVMFS5C673NL) or R (Note 1) JC XXXXXX = 673LWF T = 100C 23 C XXXXXX = (NVMFS5C673NLWF) Continuous Drain T = 25C I 14 A A D A = Assembly Location Current R JA Y = Year T = 100C 10 (Notes 1, 2, 3) A Steady W = Work Week State Power Dissipation T = 25C P 3.6 W ZZ = Lot Traceability A D R (Notes 1 & 2) JA T = 100C 1.8 A Pulsed Drain Current T = 25C, t = 10 s I 290 A DM A p ORDERING INFORMATION Operating Junction and Storage Temperature T , T 55 to C J stg See detailed ordering, marking and shipping information in the + 175 package dimensions section on page 5 of this data sheet. Source Current (Body Diode) I 52 A S Single Pulse DraintoSource Avalanche E 88 mJ AS Energy (I = 2.3 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State R 3.2 C/W JC JunctiontoAmbient Steady State (Note 2) R 42 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2021 Rev. 3 NVMFS5C673NL/DNVMFS5C673NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 28 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 35 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 25 A 7.7 9.2 DS(on) GS D m V = 4.5 V I = 25 A 11 13 GS D Forward Transconductance g V =15 V, I = 25 A 37 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 880 ISS Output Capacitance C 450 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 25 A 4.5 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 25 A 9.5 nC G(TOT) GS DS D Threshold Gate Charge Q 1.0 G(TH) GatetoSource Charge Q 2.0 nC GS V = 10 V, V = 48 V I = 25 A GS DS D GatetoDrain Charge Q 0.8 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 6.0 d(ON) Rise Time t 25 r V = 10 V, V = 48 V, GS DS ns I = 25 A, R = 2.5 D G TurnOff Delay Time t 16 d(OFF) Fall Time t 2.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 25 A S T = 125C 0.8 J Reverse Recovery Time t 28 RR Charge Time t 14 ns a V = 0 V, dIs/dt = 100 A/ s, GS I = 25 A S Discharge Time t 14 b Reverse Recovery Charge Q 18 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2