Product Information

NVR4003NT3G

NVR4003NT3G electronic component of ON Semiconductor

Datasheet
MOSFET NFET 30V .56A 1500M

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.1151 ea
Line Total: USD 1151

9700 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
17 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

NVR4003NT3G
ON Semiconductor

1 : USD 0.3633
10 : USD 0.296
30 : USD 0.263
100 : USD 0.23
500 : USD 0.2105
1000 : USD 0.2007

9700 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 10000
Multiples : 10000

Stock Image

NVR4003NT3G
ON Semiconductor

10000 : USD 0.1151

9700 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 118
Multiples : 118

Stock Image

NVR4003NT3G
ON Semiconductor

118 : USD 0.524

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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The NVR4003NT3G is a MOSFET manufactured by ON Semiconductor. It is a N-channel field-effect transistor (NFET) designed for low-voltage power switching applications. It has a maximum drain-source voltage of 30V, maximum drain current of 0.56A, and a maximum drain-source on-resistance of 1500M. The device is suitable for automotive, industrial, and consumer electronics applications and provides excellent performance in low on-resistance, low gate-charge, and safe operating area.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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