DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V R Package integrate a MOSFET and a Schottky in a single die to deliver: (BR)DSS DS(ON) T = +25C A Low R minimize conduction losses DS(ON) 10m V = 10V 12A Low V reducing the losses due to body diode conduction GS SD POWERDI 30V Low Q lower Q of the integrated Schottky reduces body rr rr 3333-8 9.5A diode switching losses 15m V = 4.5V GS Low gate capacitance (Q /Q ) ratio reduces risk of shoot g gs through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher Description density end products This MOSFET is designed to minimize on-state resistance (R ) DS(on) Occupies just 33% of the board area occupied by SO-8, enabling and yet maintain superior switching performance, making it ideal for smaller end product high efficiency power management applications. 100% UIS (Avalanche) rated 100% Rg tested Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Backlighting Power Management Functions DC-DC Converters Mechanical Data Case: POWERDI3333-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) Drain Pin 1 S 8 7 6 5 S S G Gate D D Source D D 1 2 3 4 Bottom View Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMS3012SFG-7 POWERDI3333-8 2000/Tape & Reel DMS3012SFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMS3012SFG Marking Information N12 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) N12 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 12 A I A D State 9.5 TA = +70C Continuous Drain Current (Note 6) V = 10V GS T = +25C 16.0 A t < 10s A I D 12.7 T = +70C A Steady T = +25C 9.5 A I A D State 7.5 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS TA = +25C 13.0 t < 10s A I D 10.3 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 90 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3.5 A S Avalanche Current (Note 7) L = 0.1mH I 17 A AS Avalanche Energy (Note 7) L = 0.1mH E 43 mJ AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.89 A Total Power Dissipation (Note 5) W P D T = +70C 0.55 A Steady state 145 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 74 T = +25C 2.2 A Total Power Dissipation (Note 6) W P D T = +70C 1.3 A Steady State 58 Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 31 C/W Thermal Resistance, Junction to Case (Note 6) 11 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J POWERDI is a registered trademark of Diodes Incorporated. 2 of 8 July 2014 DMS3012SFG Diodes Incorporated www.diodes.com Document number: DS35441 Rev. 8 - 2 YYWW