MOSFET - Power, Single N-Channel 80 V, 55 m , 13 A NVTFS6H888N Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS6H888NWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable 80 V 13 A 55 m 10 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) NChannel J Parameter Symbol Value Unit D (5 8) DraintoSource Voltage V 80 V DSS GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 12 C D G (4) Current R JC T = 100C 8.3 (Notes 1, 2, 3, 4) C Steady State S (1, 2, 3) Power Dissipation T = 25C P 18 W C D R (Notes 1, 2, 3) JC T = 100C 9.2 C MARKING DIAGRAM Continuous Drain T = 25C I 4.7 A A D 1 Current R JA 1 S D T = 100C 3.3 (Notes 1, 3, 4) A Steady XXXX WDFN8 S D State Power Dissipation P W T = 25C 2.9 AYWW A D S D ( 8FL) R (Notes 1, 3) JA G D CASE 511AB T = 100C 1.5 A Pulsed Drain Current T = 25C, t = 10 s I 47 A A p DM XXXX = Specific Device Code Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location Range +175 Y = Year WW = Work Week Source Current (Body Diode) I 15 A S = PbFree Package Single Pulse DraintoSource Avalanche E 47 mJ AS (Note: Microdot may be in either location) Energy (I = 0.6 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering, marking and shipping information in the device. If any of these limits are exceeded, device functionality should not be package dimensions section on page 5 of this data sheet. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit JunctiontoCase Steady State (Note 3) R 8.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 51.5 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2020 Rev. 1 NVTFS6H888N/DNVTFS6H888N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 80 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 15 A 2.0 4.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 5 A 45.7 55 m DS(on) GS D Forward Transconductance g V = 15 V, I = 10 A 18.5 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 220 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 35 oss V = 40 V DS Reverse Transfer Capacitance C 3.0 rss Threshold Gate Charge Q 1.0 nC G(TH) GatetoSource Charge Q 1.7 GS V = 10 V, V = 40 V, I = 10 A GS DS D GatetoDrain Charge Q 0.9 GD Total Gate Charge Q V = 10 V, V = 40 V, I = 10 A 4.7 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 7.0 ns d(on) Rise Time t 15 r V = 10 V, V = 64 V, GS DS I = 10 A D TurnOff Delay Time t 11 d(off) Fall Time t 11 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, GS I = 5 A S T = 125C 0.73 J Reverse Recovery Time t 25 ns RR Charge Time t 18 a V = 0 V, dl /dt = 100 A/ s, GS S I = 10 A S Discharge Time t 6.0 b Reverse Recovery Charge Q 17 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2