NTR1P02L, NVTR01P02L MOSFET Power, P-Channel, SOT-23 -20 V, -1.3 A These miniature surface mount MOSFETs low R assure DS(on) www.onsemi.com minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical V R Max I Max applications are DCDC converters and power management in (BR)DSS DS(on) D portable and batterypowered products such as computers, printers, 20 V 220 m 4.5 V 1.3 A PCMCIA cards, cellular and cordless telephones. PChannel Features D Low R Provides Higher Efficiency and Extends Battery Life DS(on) Miniature SOT23 Surface Mount Package Saves Board Space NVTR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 G Qualified and PPAP Capable PbFree and HalideFree Packages are Available S MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM & Rating Symbol Value Unit PIN ASSIGNMENT 3 DraintoSource Voltage V 20 V DSS Drain 3 GatetoSource Voltage Continuous V 12 V GS 1 Drain Current 2 P02 M I 1.3 A Continuous T = 25C D A I 4.0 A SOT23 Pulsed Drain Current (t 10 s) DM p CASE 318 Total Power Dissipation T = 25C P 400 mW 1 2 A D STYLE 21 Gate Source Operating and Storage Temperature Range T , T 55 to C J stg 150 P02 = Specific Device Code M = Date Code* Thermal Resistance JunctiontoAmbient R 300 C/W JA = PbFree Package Maximum Lead Temperature for Soldering T 260 C L (Note: Microdot may be in either location) Purposes, (1/8 from case for 10 s) *Date Code orientation may vary depending Stresses exceeding those listed in the Maximum Ratings table may damage the upon manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NTR1P02LT1G SOT23 3000 Tape & Reel (PbFree) NTR1P02LT3G SOT23 10,000 Tape & (PbFree) Reel NVTR01P02LT1G SOT23 3000 Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2019 Rev. 14 NTR1P02LT1/DNTR1P02L, NVTR01P02L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Test Condition Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Volt- (V = 0 V, I = 10 A) V 20 V GS D (BR)DSS age Zero Gate Voltage Drain Current (V = 16 V, V = 0 V) I 1.0 A DS GS DSS (V = 16 V, V = 0 V, 10 DS GS T = 125C) J GateBody Leakage Current (V = 12 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (V = V , I = 250 A) V 0.7 1.0 1.25 V DS GS D GS(th) Static DraintoSource (V = 4.5 V, I = 0.75 A) r 0.140 0.22 GS D DS(on) OnResistance (V = 2.5 V, I = 0.5 A) 0.200 0.35 GS D DYNAMIC CHARACTERISTICS Input Capacitance (V = 5.0 V) C 225 pF DS iss Output Capacitance (V = 5.0 V) C 130 DS oss Transfer Capacitance (V = 5.0 V) C 55 DS rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 7.0 ns d(on) (V = 4.5 V, V = 5.0 V, Rise Time t 15 GS DD r I = 1.0 A, R = 5.0 , D L TurnOff Delay Time t 18 R = 6.0 ) d(off) G Fall Time t 9 f Total Gate Charge (V = 16 V, I = 1.5 A, Q 3.1 nC DS D T V = 4.5 V) GS SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current I 0.6 A S Pulsed Current I 0.75 SM Forward Voltage (Note 2) (V = 0 V, I = 0.6 A) V 1.0 V GS S SD Reverse Recovery Time t 16 ns rr (I = 1.0 A, V = 0 V, S GS t 11 a dI /dt = 100 A/ s) S t 5.5 b Reverse Recovery Stored Charge Q 8.5 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2