R29681DM/883 is a dual N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for use as a load switch, level shifter, and power multiplexer, among other applications. The device has a drain source voltage (VDS) of 40V, a drain source on-resistance (RDS(on)) of 0.1 ohms, and a continuous drain current (ID) rating of 600mA. With a threshold voltage (VGSth) of 5V, this MOSFET is suitable for low voltage and portable systems. Additionally, the device has a package size of DPOW (CMPAK-6).