RHRG3060CC ON Semiconductor

RHRG3060CC electronic component of ON Semiconductor
RHRG3060CC ON Semiconductor
RHRG3060CC Diodes - General Purpose, Power, Switching
RHRG3060CC  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of RHRG3060CC Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RHRG3060CC Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No.RHRG3060CC
Manufacturer:ON Semiconductor
Category:Diodes - General Purpose, Power, Switching
Description:Diodes - General Purpose, Power, Switching 30A 600V
Datasheet:RHRG3060CC Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.4059
10$ 4.1692
25$ 4.036
50$ 3.9552
100$ 3.9552
500$ 3.8031
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.0337
10$ 5.9101
100$ 4.8432
450$ 4.1132
900$ 3.6079
2700$ 3.4956
N/A

Obsolete

Availability0
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 4.4059
10$ 4.1692
25$ 4.036
50$ 3.9552
N/A

Obsolete

Availability0
MOQ : 450
Multiples : 450
QtyUnit Price
450$ 3.8092
N/A

Obsolete

Availability0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 3.3326
25$ 3.1023
50$ 3.0402
N/A

Obsolete

Availability0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 3.3565
25$ 3.1245
50$ 3.062
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Operating Temperature Range
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RHRG3060CC from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RHRG3060CC and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Hyperfast Dual Diode 60 A, 400 V - 600 V RHRG3060CC, RHRG3040CC Description The RHRG3060CC, RHRG3040CC is a hyperfast dual diode withsoft recovery characteristics. It has the half recovery time www.onsemi.com ofultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction These devices are intended to be used as freewheeling/ clamping CATHODE ANODE 2 diodes and diodes in a variety of switching power supplies and other (BOTTOM SIDE METAL) CATHODE power switching applications. Their low stored charge and hyperfast ANODE 1 soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features TO2473LD Hyperfast Recovery t = 45 ns ( I = 30 A) rr F CASE 340CK Max Forward Voltage, V = 2.1 V ( T = 25C) F C High Reverse Voltage and High Reliability K Avalanche Energy Rated These Devices are PbFree and are RoHS Compliant Applications Switching Power Supplies A A 1 2 Power Switching Circuits General Purpose MARKING DIAGRAM Y&Z&3&K RHRG30XXC Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RHRG30XXC = Specific Device Code XX = 60, 40 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2020 Rev. 3 RHRG3060CC/DRHRG3060CC, RHRG3040CC ABSOLUTE MAXIMUM RATING (Per Leg) (T = 25C, unless otherwise specified) J Description Symbol RHRG3060CC RHRG3040CC Unit Peak Repetitive Reverse Voltage V 600 400 V RRM Working Peak Reverse Voltage V 600 400 V RWM DC Blocking Voltage V 600 400 V R Average Rectified Forward Current (T = 120C) I ) 30 30 A C F(AV Repetitive Peak Surge Current (Square Wave, 20 kHz) I 70 70 A FRM Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) I 325 325 A FSM Maximum Power Dissipation P 125 125 W D Avalanche Energy (See Figures 10 and 11) E 20 20 mJ AVL Operating and Storage Temperature T , T 65 to 175 65 to 175 C STG J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping RHRG3060CC RHRG3060C TO2473L 450 / Tube RHRG3040CC RHRG3040C TO2473L 450 / Tube ELECTRICAL SPECIFICATIONS (Per Leg) (T = 25C, unless otherwise specified) J RHRG3060CC RHRG3040CC Unit Min Typ Max Min Typ Max Unit Characteristic Symbol Test Conditions Instantaneous Forward Voltage V I = 30 A 2.1 2.1 V F F (Pulse Width = 300 s, I = 30 A, T = 150C 1.7 1.7 V Duty Cycle = 2%) F C Instantaneous Reverse Current I V = 400 V 250 A R R V = 600 V 250 A R V = 400 V, T = 150C 1.0 mA R C V = 600 V, T = 150C 1.0 mA R C Reverse Recovery Time T I = 1 A, dI /dt = 200 A/ s 40 40 ns rr F F (See Figure 9), I = 30 A, dI /dt = 200 A/ s 45 45 ns Summation of ta + tb. F F Time to Reach Peak Reverse t I = 30 A, dI /dt = 200 A/ s 22 22 ns a F F Current (See Figure 9). Time from Peak I to Projected t I = 30 A, dI /dt = 200 A/ s 18 18 ns RM b F F Zero Crossing of I Based on RM a Straight Line from Peak I RM through 25% of I RM (See Figure 9). Reverse Recovery Charge Q I = 30 A, dI /dt = 200 A/ s 100 100 nC rr F F Junction Capacitance C V = 10 V, I = 0 A 85 85 pF J R F Thermal Resistance Junction R 1.2 1.2 C/W JC to Case Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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