ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. RHRP8120 Data Sheet November 2013 Features 8 A, 1200 V, Hyperfast Diode Hyperfast Recovery t = 70 ns ( I = 8 A) rr F Max Forward Voltage, V = 3.2 V ( T = 25C) F C The RHRP8120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast 1200 V Reverse Voltage and High Reliability diodes and is silicon nitride passivated ionimplanted Avalanche Energy Rated epitaxial planar construction. These devices are RoHS Compliant intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored Applications charge and hyperfast soft recovery minimize ringing and Switching Power Supplies electrical noise in many power switching circuits reducing power loss in the switching transistors. Power Switching Circuits General Purpose Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC TO-220AC RHRP8120 TO-220AC-2L RHRP8120 ANODE NOTE: When ordering, use the entire part number. CATHODE CATHODE Symbol (FLANGE) K A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRP8120 UNIT Peak Repetitive Reverse Voltage . V 1200 V RRM Working Peak Reverse Voltage V 1200 V RWM DC Blocking Voltage . V 1200 V R Average Rectied Forward Current I 8A F(AV) o (T = 140 C) C Repetitive Peak Surge Current . I 16 A FRM (Square Wave, 20 kHz) Nonrepetitive Peak Surge Current . I 100 A FSM (Halfwave, 1 Phase, 60 Hz) Maximum Power Dissipation . P 75 W D Avalanche Energy (See Figures 10 and 11) . E 20 mJ AVL o Operating and Storage Temperature T , T -65 to 175 C STG J 2001 Semiconductor Components Industries, LLC. Publication Order Number: 1 November-2017, Rev. 3 RHRP8120/D