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It has half the rr o Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175 C recovery time of ultrafast diodes and is silicon nitride Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . 600V passivated ion-implanted epitaxial planar construction. Avalanche Energy Rated This device is intended for use as freewheeling/clamping diodes and rectiers in a variety of Planar Construction switching power supplies and other power switching applications. Its low stored charge and hyperfast soft Applications recovery minimize ringing and electrical noise in many Switching Power Supplies power switching circuits reducing power loss in the switching transistors. Power Switching Circuits Formerly developmental type TA49059. General Purpose Ordering Information Packaging JEDEC TO-220AC PART NUMBER PACKAGE BRAND RHRP860 F085 TO-220AC RHRP860 F085 ANODE CATHODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRP860 F085 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 600 V RRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 600 V RWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 600 V R Average Rectied Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 8 A F(AV) o (T = 150 C) C Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 16 A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I 100 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 75 W D Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E 20 mJ AVL o Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -65 to 175 C STG J 2011 Fairchild Semiconductor Corporation RHRP860 F085 Rev. C