Product Information

RURG3060_F085

RURG3060_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor Rectifiers

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9675 ea
Line Total: USD 3.97

166 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
134 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

RURG3060_F085
ON Semiconductor

1 : USD 3.8985
10 : USD 3.174
100 : USD 2.7485
450 : USD 2.369
900 : USD 2.208
2700 : USD 2.116

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Ultrafast Rectifier 30 A, 600 V RURG3060-F085 Description The RURG3060F085 is an ultrafast diode with soft recovery characteristics (trr< 80 ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction. www.onsemi.com This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss 1 in the switching transistors. 1. Cathode 2 2. Anode Features High Speed Switching (t = 60 ns(Typ.) I = 30 A) rr F TO2472LD CASE 340CL Low Forward Voltage (V = 1.5 V(Max.) I = 30 A) F F Avalanche Energy Rated AECQ101 Qualified and PPAP Capable This Device is PbFree Applications Automotive DC/DC Converter 1 2 Automotive On Board Charger 2. Anode 1. Cathode Switching Power Supply Power Switching Circuits MARKING DIAGRAM Y&Z&3&K RURG3060 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RURG3060 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2020 Rev. 4 RURG3060F085/DRURG3060 F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 25C) I 30 A C F(AV) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) I 90 A FSM Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating Junction and Storage Temperature T T 55 to C J, STG +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity RURG3060F085 RURG3060 TO2472LD 30 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Parameter Symbol Value Unit Maximum Thermal Resistance, Junction to Case R 0.7 C/W JC Maximum Thermal Resistance, Junction to Ambient R 45 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Test Conditions Min Typ Max Unit Parameter Instantaneous Reverse Current I V = 600 V T = 25C 250 A R R C T = 175C 1 mA C Instantaneous Forward Voltage V I = 30 A T = 25C 1.26 1.5 V FM F C (Note 1) T = 175C 1.06 1.3 V C Reverse Recovery Time t I = 1 A, di/dt =100 A/ s, T = 25C 35 55 ns rr F C (Note 2) V = 390 V CC I = 30 A, di/dt = 100 A/ s, T = 25C 60 80 ns F C V = 390 V CC T = 175C 231 ns C Reverse Recovery Time t I = 30 A, di/dt = 100 A/ s, T = 25C 31 ns a F C V = 390 V CC t 29 ns b Reverse Recovery Charge Q 92 nC rr Avalanche Energy E I = 1.0 A, L = 40 mH 20 mJ AVL AV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% 2. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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