Product Information

RURG8060_F085

RURG8060_F085 electronic component of ON Semiconductor

Datasheet
Rectifiers 80A, 600V Ultrafast Rectifier

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 450
Multiples : 1

Stock Image

RURG8060_F085
ON Semiconductor

450 : USD 3.9682
500 : USD 3.4356
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

RURG8060_F085
ON Semiconductor

1 : USD 8.9558
10 : USD 7.7559
N/A

Obsolete
0 - Global Stock

MOQ : 450
Multiples : 450

Stock Image

RURG8060_F085
ON Semiconductor

450 : USD 4.227
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

RURG8060_F085
ON Semiconductor

1 : USD 7.2673
10 : USD 6.1081
120 : USD 4.9266
270 : USD 4.7817
510 : USD 4.1686
1020 : USD 3.9011
2520 : USD 3.8788
N/A

Obsolete
0 - Global Stock

MOQ : 450
Multiples : 450

Stock Image

RURG8060_F085
ON Semiconductor

450 : USD 2.4247
N/A

Obsolete
     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Ultrafast Rectifier 80 A, 600 V RURG8060-F085 Description The RURG8060F085 is an ultrafast diode with soft recovery characteristics (trr < 90ns). It has low forward voltage drop and is www.onsemi.com of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/ clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. CATHODE ANODE Features TO2472L High Speed Switching ( t = 74 ns (Typ.) I = 80 A ) 340CL rr F Low Forward Voltage( V = 1.34 V (Typ.) I = 80 A ) F F Avalanche Energy Rated MARKING DIAGRAM AECQ101 Qualified This Device is PbFree Y&Z&3&K Applications RURG8060 Automotive DCDC converter Automotive On Board Charger Switching Power Supply Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit Y = ON Semiconductor Logo Peak Repetitive Reverse Voltage V 600 V RRM &Z = Assembly Plant Code Working Peak Reverse Voltage V 600 V &3 = Numeric Date Code RWM &K = Lot Code DC Blocking Voltage V 600 V R RURG8060 = Specific Device Code Average Rectified Forward Current I 80 A F(AV) (T = 25 C) C Nonrepetitive Peak Surge Current I 240 A FSM (Halfwave 1 Phase 50 Hz) Avalanche Energy E 50 mJ AVL 1. Cathode 2. Anode (1.6 A, 40 mH) Operating Junction and Storage T T 55 to C J, STG Temperature +175 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 2 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2020 Rev. 5 RURG8060F085/DRURG8060 F085 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Max Units R Maximum Thermal Resistance, Junction to Case 0.85 C/W JC R Maximum Thermal Resistance, Junction to Ambient 50 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Tube Quantity RURG8060 RURG8060F085 TO247 30 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit I Instantaneous Reverse Current V = 600 V T = 25C 250 uA R R C T = 175C 2 mA C V Instantaneous Forward Voltage I = 80 A T = 25C 1.34 1.6 V FM F C (Note 1) T = 175C C 1.17 1.4 V I = 1 A, T = 25C t Reverse Recovery Time 46 75 ns F C rr di/dt = 100 A/ s, (Note 2) V = 390 V CC I = 80 A, T = 25C F C 74 90 ns di/dt = 100 A/ s, V = 390 V T = 175C C 290 ns CC ta Reverse Recovery Time I = 80 A, T = 25C 38 ns F C tb di/dt = 100 A/ s, 36 ns Q Reverse Recovery Charge V = 390 V 130 nC rr CC E Avalanche Energy I = 1.6 A, L = 40 mH 50 mJ AVL AV 1. Pulse : Test Pulse width = 300 s, Duty Cycle = 2% 2. Guaranteed by design Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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