SB007-03Q-TL-E ON Semiconductor

Ordering number : EN2939B SB007-03Q Schottky Barrier Diode SB007-03Q Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =20A30 V R R Forward Voltage V I =70mA 0.55 V F F Reverse Current I V =15V 5 A R R Interterminal Capacitance C V =10V, f=1MHz 3.0 pF R Reverse Recovery Time t I =I =10mA, See speci ed Test Circuit. 10 ns rr F R t Test Circuit rr Duty10% 50 100 10 10s 5V t rr Ordering Information Device Package Shipping memo SB007-03Q-TL-E MCP 3,000pcs./reel Pb Free I -- V I -- V F F R R 2 1000 5 100 2 7 100 5 5 3 2 2 10 5 10 2 7 1.0 5 5 3 2 2 0.1 5 1.0 2 7 5 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 152025 30 35 Forward Voltage, V -- V ID00244 Reverse Voltage, V -- V ID00245 F R C -- V I -- t R FSM 2 2.8 f=1MHz Current waveform 50Hz sine wave 2.4 10 I S 7 20ms 2.0 t 5 1.6 3 2 1.2 1.0 0.8 7 0.4 5 3 0 7 2 357 23257 3 577235 2 35 1.0 10 0.01 0.1 1.0 Reverse Voltage, V -- V ID00246 ID00247 Time, t -- s R No.2939-2/5 75C 25C 100C 50C Ta=125C 25C Ta=125C Interterminal Capacitance, C -- pF Forward Current, I -- mA F 10mA 10mA 1mA Surge Forward Current, I (Peak) -- A Reverse Current, I -- A FSM R