SB01-15C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA0407A SB01-15C Schottky Barrier Diode SB01-15C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =200A 150 V R R Forward Voltage V I =100mA 0.75 V F F Reverse Current I V =75V 50 A R R Interterminal Capacitance C V =10V, f=1MHz 7 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R Rth(j-a)1 420 C / W 2 Thermal Resistance Mounted in Cu-foiled area of 16mm 0.2mm Rth(j-a)2 330 C / W on glass epoxy board t Test Circuit rr Duty10% 50 100 10 10s --5V t rr Ordering Information I -- V I -- V F F R R 1000 1000 7 5 5 2 3 100 2 5 2 100 10 7 5 5 3 2 2 1.0 5 10 2 7 5 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 125 150 175 Forward Voltage, V -- V ID00274 Reverse Voltage, V -- V ID00275 F R P (AV) -- I C -- V F O R 120 5 f=1MHz (1)Rectangular wave =60 (4) (2)Rectangular wave =120 3 100 (3)Rectangular wave =180 (3) 2 (4)Sine wave =180 (2) 80 (1) Rectangular 10 wave 7 60 5 360 40 3 Sine wave 2 20 180 360 0 1.0 0 20 40 60 80 100 120 2235 7 2 3 57 3 1.0 10 100 Average Output Current, I -- mA ID00276 Reverse Voltage, V -- V ID00277 O R No.A0407-2/6 25C 100C 50C 75C Ta=125C 25C Ta=125C Average Forward Power Dissipation, P (AV) -- mW Forward Current, I -- mA F F 100mA 100mA 10mA Interterminal Capacitance, C -- pF Reverse Current, I -- A R