SB02-09C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : ENA0408A SB02-09C Schottky Barrier Diode SB02-09C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =200A90 V R R Forward Voltage V I =200mA 0.7 V F F Reverse Current I V =45V 50 A R R Interterminal Capacitance C V =10V, f=1MHz 10 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R Rth(j-a)1 420 C / W 2 Thermal Resistance Mounted in Cu-foiled area of 16mm 0.2mm Rth(j-a)2 330 C / W on glass epoxy board t Test Circuit rr Duty10% 50 100 10 10s 5V t rr Ordering Information Device Package Shipping memo SB02-09C-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V F F R R 1000 1000 7 5 5 2 3 100 2 5 2 100 10 7 5 5 3 2 2 1.0 5 10 2 7 5 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 20 40 60 80 100 Forward Voltage, V -- V ID00304 Reverse Voltage, V -- V ID00305 F R P (AV) -- I C -- V F O R 250 100 f=1MHz (1)Rectangular wave =60 7 (2)Rectangular wave =120 5 200 (3)Rectangular wave =180 (4)Sine wave =180 (3) (4) (1) 3 150 Rectangular 2 (2) wave 10 100 360 7 Sine wave 5 50 180 3 360 0 2 0 50 100 150 200 250 300 2 35 7 2 3 57 2 1.0 10 100 Average Output Current, I -- A ID00306 Reverse Voltage, V -- V ID00307 O R No.A0408-2/7 Ta=125C 100C 75C 25C 50C 25C Ta=125C Average Forward Power Dissipation, P (AV) -- mW Forward Current, I -- mA F F 10mA 10mA 1.0mA Interterminal Capacitance, C -- pF Reverse Current, I -- A R