SB10-05P Schottky Barrier Diode www.onsemi.com 50V, 1A, Low IR, Single Applications High Frequency Rectification (Switching Regulators, Converters, Choppers) Features Low Forward Voltage (V max=0.55V) F Short Reverse Recovery Time (t max=10ns) rr Low Switching Noise Low Leakage Current and High Reliability Due to Reliable Planar Structure Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V 50 V RRM Non-repetitive Peak Reverse Surge Voltage V 55 V RSM Average Output Current I 1A O Surge Forward Current I 50Hz sine wave, 1 cycle 10 A FSM Junction Temperature Tj 55 to +125 C Storage Temperature Tstg 55 to +125 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =300A 50 V R R Forward Voltage V V=1A 0.55V F F Reverse Current I V=25V 80 A R R Interterminal Capacitance C V =10V, f=1MHz 52 pF R Reverse Recovery Time t I = I =100mA, See specification Test Circuit 10 ns rr F R Rthj-a (1) 300 C / W Thermal Resistance 2 Rthj-a (2) Mounted on a ceramic board (250mmx0.8mm) 110 C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Packing Type : TD Marking Electrical Connection 1 : Anode 2 : Cathode 3 : No Contact TD SOT-89 / PCP-1 ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : February 2015 - Rev. 1 SB10-05P/D SB10-05P I -- V I -- V F F R R 10 10 7 5 5 2 3 1.0 2 5 2 1.0 0.1 7 5 5 2 3 0.01 2 5 2 0.1 0.001 7 5 5 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 Forward Voltage, V -- V ID00430 Reverse Voltage, V -- V ID00431 F R P (AV) -- I P (AV) -- V F O R RM 1.4 500 (1)Rectangular wave =300 (1)Rectangular wave =60 (2)Rectangular wave =240 (2)Rectangular wave =120 1.2 (3)Rectangular wave =180 (3)Rectangular wave =180 400 (4)Sine wave =180 (4)Sine wave =180 1.0 Rectangular Rectangular wave wave 300 (4) 0.8 V (3) R (1) (2) (2) 360 0.6 360 (1) 200 Sine wave (3) 0.4 V R Sine wave 100 180 (4) 0.2 360 180 360 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 Average Output Current, I -- A ID00432 Peak Reverse Voltage, V -- V ID00433 O RM C -- V I -- t R FSM 5 14 f=1MHz Current waveform 50Hz sine wave 3 12 I S 2 20ms 10 t 100 8 7 6 5 4 3 2 2 10 0 2 35 7 2 3 5 7 7 23527 375 2 3 1.0 10 100 0.01 0.1 1.0 Reverse Voltage, V -- V ID00434 Time, t -- s HD00435 R t Test Circuit rr Duty10% 50 100 10 10s --5V t rr www.onsemi.com 2 Ta=125C 50C 25 C 75C 100C Ta=125C 25C Forward Current, I -- A Interminal Capacitance, C -- pF Average Forward Power Dissipation, P (AV) -- W F F 100mA 100mA 10mA Surge Forward Current, I (Peak) -- A Average Reverse Power Dissipation, P (AV) -- mW Reverse Current, I -- mA FSM R R