BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low www.onsemi.com forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 40 VOLTS SCHOTTKY BARRIER DIODES Features Extremely Fast Switching Speed Low Forward Voltage S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 (TO236) These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 Compliant STYLE 11 MAXIMUM RATINGS ANODE CATHODE 1 2 Rating Symbol Value Unit 3 Reverse Voltage V 40 V R CATHODE/ANODE Forward Power Dissipation P F T = 25C 225 mW A MARKING DIAGRAM Derate above 25C 1.8 mW/C Operating Junction and Storage T T 55 to +150 C J, stg Temperature Range CB M Forward Continuous Current I 120 mA FM 1 Single Forward Current I mA FSM t 1 s 200 t 10 ms 600 CB = Specific Device Code M = Date Code* Thermal Resistance (Note 1) R 508 C/W JA = PbFree Package JunctiontoAmbient (Note 2) 311 (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage *Date Code orientation and/or overbar may the device. If any of these limits are exceeded, device functionality should not vary depending upon manufacturing location. be assumed, damage may occur and reliability may be affected. 1. FR4 minimum pad. 2. FR4 1.0 x 1.0 in pad. ORDERING INFORMATION Device Package Shipping BAS4004LT1G SOT23 3,000 / (PbFree) Tape & Reel SBAS4004LT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: March, 2018 Rev. 13 BAS4004LT1/DBAS4004LT1G, SBAS4004LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 40 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 5.0 R Reverse Leakage I A R (V = 25 V) 1.0 R Forward Voltage V mV F (I = 1.0 mA) 380 F Forward Voltage V mV F (I = 10 mA) 500 F Forward Voltage V V F (I = 40 mA) 1.0 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 100 100 T = 150C A 125C 10 10 85C 1.0 150C 0.1 1.0 1 25C 85C 25C 0.01 25C - 40C - 55C 0.1 0.001 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5.0 10 15 20 V , REVERSE VOLTAGE (VOLTS) R V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , CAPACITANCE (pF) T I , REVERSE CURRENT (A) R