BAT54CT Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. 30 VOLT Features DUAL COMMON CATHODE Extremely Fast Switching Speed SCHOTTKY BARRIER DIODES Low Forward Voltage 0.35 Volts (Typ) I = 10 mAdc F S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 2 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SC75 CASE 463 STYLE 3 MAXIMUM RATINGS (T = 125C unless otherwise noted) J Rating Symbol Value Unit 1 2 Reverse Voltage V 30 V R ANODE ANODE Forward Power Dissipation P F 3 T = 25C 225 mW A CATHODE Derate above 25C 1.8 mW/C Thermal Resistance, R C/W JA MARKING DIAGRAM Junction-to-Ambient (Note 1) 555 Forward Current (DC) I 200 Max mA F 5CM NonRepetitive Peak Forward I mA FSM Current, t < 10 msec 600 p 1 Repetitive Peak Forward Current I mA FRM 5C = Device Code Pulse Wave = 1 sec, 300 M = Date Code* Duty Cycle = 66% = PbFree Package Junction Temperature T 55 to 125 C J (Note: Microdot may be in either location) Storage Temperature Range T 55 to +150 C *Date Code orientation may vary depending up- stg on manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR4 board with minimum mounting pad. Device Package Shipping BAT54CTT1G SC75 3,000 / Tape & Reel (PbFree) SBAT54CTT1G SC75 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 Publication Order Number: 1 November, 2014 Rev. 5 BAT54CTT1/DBAT54CT ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2