Ordering number : ENN7803 SBT350-04R Schottky Barrier Diode (Twin Type Cathode Common) SBT350-04R 40V, 35A Rectifier Applications High frequency rectification (switching regulators, converters, choppers). Features Guaranteed up to Tj=150C. Low forward voltage (V max=0.55V). F Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V 40 V RRM Nonrepetitive Peak Reverse Surge Voltage V 44 V RSM Average Output Current I 50Hz resistive load, Sine wave Tc=97C35A O Surge Forward Current I 50Hz sine wave, 1 cycle 200 A FSM Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =5mA, Tj=25C* 40 V R R Forward Voltage V I =15A, Tj=25C* 0.55 V F F Reverse Current I V =20V, Tj=25C* 0.5 mA R R Interterminal Capacitance C V =10V, Tj=25C* 800 pF R Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 2.0 C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405SD MS IM TB-00001567 No.7803-1/3SBT350-04R Package Dimensions Electrical Connection unit : mm 7505-001 Anode Anode 5.6 16.0 3.4 3.1 Cathode 2.8 2.0 2.0 1.0 0.6 12 3 1 : Anode 2 : Cathode 3 : Anode 5.45 5.45 SANYO : TO-3PML I -- V I -- V F F R R 100 7 7 Represented by max 5 5 3 3 2 2 10 7 5 100 3 7 2 5 1.0 7 3 5 2 3 2 10 0.1 7 7 5 5 3 2 3 2 0.01 0 0.4 0.8 1.2 0 10 20 30 40 50 Forward Voltage, V -- V IT09134 Reverse Voltage, V -- V IT09135 F R P (AV) -- I P (AV) -- V F O R RM 30 14 (1)Rectangular wave =300 (1)Rectangular wave =60 13 (2)Rectangular wave =240 (1) (2)Rectangular wave =120 12 (3) 25 (3)Rectangular wave =180 (3)Rectangular wave =180 (4) 11 (4)Sine wave =180 (4)Sine wave =180 (2) 10 (2) (1) 20 Rectangular 9 Rectangular wave wave 8 (3) V R 15 7 6 360 360 5 10 Sine wave 4 Sine wave (4) V R 3 180 5 2 360 180 1 360 0 0 05410 15 20 25 30 35 405 0 10 20 30 40 50 Peak Reverse Voltage, V -- V Average Output Current, I -- A IT09136 IT09137 RM O No.7803-2/3 125C typ Tj=150C max 150C typ C 100 typ Tj=150C 25C Forward Current, I -- A Average Forward Power Dissipation, P (AV) -- W F F 21.0 4.0 5.0 3.5 8.0 20.4 22.0 2.0 Average Reverse Power Dissipation, P (AV) -- W Reverse Current, I -- mA R R