SDTC124EET1G ON Semiconductor

SDTC124EET1G electronic component of ON Semiconductor
SDTC124EET1G ON Semiconductor
SDTC124EET1G Bipolar Transistors - BJT
SDTC124EET1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of SDTC124EET1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SDTC124EET1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. SDTC124EET1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-416 T/R
Datasheet: SDTC124EET1G Datasheet (PDF)
Price (USD)
12000: USD 0.0242 ea
Line Total: USD 290.4 
Availability : 0
  
QtyUnit Price
12000$ 0.0242

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0242


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 18000
Multiples : 18000
QtyUnit Price
18000$ 0.0532


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9321
10$ 0.6939
100$ 0.1574
500$ 0.1046
1000$ 0.0808
3000$ 0.0621


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 12000
Multiples : 12000
QtyUnit Price
12000$ 0.042


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 12000
Multiples : 12000
QtyUnit Price
12000$ 0.0675

   
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Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the SDTC124EET1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SDTC124EET1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 k , R2 = 22 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 1 CollectorEmitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc SC75 C XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 3 DTC124E/DMUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2212T1G, NSVMUN2212T1G* 8B SC59 3000 / Tape & Reel (PFree) MMUN2212LT1G, NSVMMUN2212LT1G* A8B SOT23 3000 / Tape & Reel (PFree) MUN5212T1G, SMUN5212T1G* 8B SC70/SOT323 3000 / Tape & Reel (PFree) DTC124EET1G, SDTC124EET1G* 8B SC75 3000 / Tape & Reel (PFree) DTC124EM3T5G 8B SOT723 8000 / Tape & Reel (PFree) NSBC124EF3T5G L SOT1123 8000 / Tape & Reel (PFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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