SFP9Z34
Advanced Power MOSFET
FEATURES
BV = -60 V
DSS
n Avalanche Rugged Technology
R = 0.14
DS(on)
n Rugged Gate Oxide Technology
n Lower Input Capacitance
I = -18 A
D
n Improved Gate Charge
o
n 175 C Opereting Temperature
TO-220
n Extended Safe Operating Area
n Lower Leakage Current : -10 A(Max.) @ V = -60V
DS
n Low R : 0.106 (Typ.)
DS(ON) 1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
V Drain-to-Source Voltage
-60 V
DSS
o
Continuous Drain Current (T =25 C) -18
C
I
A
D o
Continuous Drain Current (T =100 C)
-12.6
C
1
I
Drain Current-Pulsed O -72 A
DM
V Gate-to-Source Voltage
30 V
GS
2
E
Single Pulsed Avalanche Energy 555 mJ
AS O
1
I Avalanche Current
O -18 A
AR
1
E
Repetitive Avalanche Energy O 8.2 mJ
AR
3
dv/dt Peak Diode Recovery dv/dt
O -5.5 V/ns
o
Total Power Dissipation (T =25 C) 82 W
C
P
D
o
Linear Derating Factor
0.55 W/ C
Operating Junction and
T , T - 55 to +175
J STG
Storage Temperature Range
o
C
Maximum Lead Temp. for Soldering
T 300
L
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol Characteristic Typ. Max. Units
R
Junction-to-Case -- 1.83
JC
o
R
Case-to-Sink 0.5 --
CS C/W
R
Junction-to-Ambient -- 62.5
JA
Rev. CP-CHANNEL
SFR/U9034
POWER MOSFET
o
Electrical Characteristics (T =25 C unless otherwise specified)
C
Symbol Characteristic Min. Typ. Max. Units Test Condition
BV
V V =0V,I =-250 A
DSS Drain-Source Breakdown Voltage -60 -- --
GS D
o
BV/ T
I =-250 A See Fig 7
J Breakdown Voltage Temp. Coeff. V/ C
-- -0.05 -- D
V
V V =-5V,I =-250 A
GS(th) Gate Threshold Voltage -2.0 -- -4.0
DS D
V =-20V
Gate-Source Leakage , Forward
-- -- -100 GS
I nA
GSS
V =20V
Gate-Source Leakage , Reverse -- -- 100
GS
V =-60V
-- -- -10 DS
I Drain-to-Source Leakage Current
DSS A o
V =-48V,T =125 C
-- -- -100
DS C
Static Drain-Source
4
R V =-10V,I =-7.0A
-- -- 0.14 O
DS(on) GS D
On-State Resistance
4
g -- V =-30V,I =-7.0A
Forward Transconductance 8.1 -- S
fs DS D O
C
Input Capacitance -- 890 1155
iss
V =0V,V =-25V,f =1MHz
GS DS
C --
Output Capacitance 265 400
oss pF
See Fig 5
C
Reverse Transfer Capacitance -- 84 125
rss
t --
Turn-On Delay Time 14 40
d(on)
V =-30V,I =-18A,
DD D
t
Rise Time -- 24 60
r
R =12
ns
G
t --
Turn-Off Delay Time 43 95
d(off)
See Fig 13 4
5
OO
t
Fall Time -- 28 65
f
Q --
Total Gate Charge 30 38 V =-48V,V =-10V,
g
DS GS
Q
Gate-Source Charge -- 5.3 -- nC I =-18A
gs
D
4
5
Q --
Gate-Drain(Miller) Charge 12 -- See Fig 6 & Fig 12 OO
gd
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic Min. Typ. Max. Units Test Condition
I Continuous Source Current
-- -- -14 Integral reverse pn-diode
S
A
1
I Pulsed-Source Current
O -- -- -56 in the MOSFET
SM
o
4
V Diode Forward Voltage V
-- -- -3.9 T =25 C,I =-14A,V =0V
SD O
J S GS
o
t Reverse Recovery Time ns
-- 85 -- T =25 C,I =-18A
rr
J F
Q Reverse Recovery Charge C 4
-- 0.25 -- di /dt=100A/ s
O
rr F
Notes ;
1
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
o
2
L=3.0mH, I =-14A, V =-25V, R =27 *, Starting T =25 C
O
AS DD G J
o
3
_ _ _
I < -18A, di/dt < 300A/ s, V < BV , Starting T =25 C
O
SD DD DSS J
4
_
Pulse Test : Pulse Width = 250 s, Duty Cycle< 2%
O
5
Essentially Independent of Operating Temperature
O