Ordering number : ENA1897A SFT1445 N-Channel Power MOSFET SFT1445 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =100V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =8.5A 8.9 S DS D R (on)1 I =8.5A, V =10V 85 111 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =4A, V =4.5V 90 126 m DS D GS R (on)3 I =4A, V =4V 93 130 m DS D GS Input Capacitance Ciss 1030 pF Output Capacitance Coss V =20V, f=1MHz 78 pF DS Reverse Transfer Capacitance Crss 42 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 35 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 60 ns d Fall Time t 60 ns f Total Gate Charge Qg 19 nC Gate-to-Source Charge Qgs V =50V, V =10V, I =17A 3.6 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.8 nC Diode Forward Voltage V I =17A, V =0V 0.96 1.2 V SD S GS Switching Time Test Circuit V =50V V IN DD 10V 0V I =8.5A D V IN R =5.9 L D V OUT PW=10s D.C.1% G SFT1445 P.G 50 S Ordering Information Device Package Shipping memo SFT1445-H TP 500pcs./bag Pb Free and Halogen Free SFT1445-TL-H TP-FA 700pcs./reel No. A1897-2/9