SM12T1 ESD Protection Diode Array Dual Common Anode These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as www.onsemi.com computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These 1 PIN 1. CATHODE devices are ideal for situations where board space is at a premium. 3 2. CATHODE 2 3. ANODE Specification Features: SOT23 Package Allows Either Two Separate Unidirectional MARKING Configurations or a Single Bidirectional Configuration DIAGRAM 3 Working Peak Reverse Voltage Range 12 V Standard Zener Breakdown Voltage Range 13.3 V to 15.75 V 1 Peak Power 300 Watt (8 X 20 s) 2 12M Low Leakage SOT23 Flammability Rating UL 94 V0 CASE 318 STYLE 12 12M = Device Code Mechanical Characteristics: M = Date Code CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: ORDERING INFORMATION 260C for 10 Seconds Device Package Shipping Package designed for optimal automated board assembly Small package size for high density applications SM12T1 SOT23 3000/Tape & Reel Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: November, 2017 Rev. 1 SM12T1/D MSM12T1 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 20 s (Note 1) P 300 Watts pk T 25C L IEC 6100042 (ESD) Air 15 kV Contact 8.0 IEC 6100044 (EFT) 40 A IEC 6100045 (Lightening) 12 A Total Power Dissipation on FR5 Board (Note 2) T = 25C P 225 mW A D Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient R 556 C/W JA Total Power Dissipation on Alumina Substrate (Note 3) T = 25C P 300 mW A D Derate above 25C 2.4 mW/C Thermal Resistance Junction to Ambient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L 1. Nonrepetitive current pulse per Figure 3 2. FR5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *Other voltages may be available upon request ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I F V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T V V V C BR RWM V I V R F I Test Current T I T V Maximum Temperature Coefficient of V BR BR I Forward Current F V Forward Voltage I F F I PP Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK UniDirectional Z Maximum Zener Impedance I ZK ZK ELECTRICAL CHARACTERISTICS V , Breakdown Voltage Typical Capacitance BR V Max I C PP (Volts) (pF) V I V I = 1 Amp (Note 4) RWM R RWM PP Device Marking (Volts) ( A) Min Max (Volts) (Amps) Pin 1 to 3 0 Volts Device SM12T1 12M 12 1.0 13.3 15.75 19 12 95 4. 8 20 s pulse waveform per Figure 3 www.onsemi.com 2