PZT751 PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface www.onsemi.com mount applications. Features SOT223 PACKAGE HIGH CURRENT High Current NPN SILICON TRANSISTOR The SOT223 Package can be soldered using wave or reflow. SURFACE MOUNT SOT223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of 4 Soldered Joints. The Formed Leads Absorb Thermal Stress During 1 Soldering, Eliminating the Possibility of Damage to the Die 2 3 NPN Complement is PZT651T1G SOT223 CASE 318E S Prefix for Automotive and Other Applications Requiring Unique STYLE 1 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 2, 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* BASE 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) C EMITTER 3 Rating Symbol Value Unit CollectorEmitter Voltage V 60 Vdc CEO MARKING DIAGRAM CollectorBase Voltage V 80 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO AYW ZT751 Collector Current I 2.0 Adc C Total Power Dissipation P W D 1 T = 25C (Note 1) 0.8 mW/C A Derate above 25C 6.4 A = Assembly Location Y = Year Storage Temperature Range T 65 to 150 C stg W = Work Week Junction Temperature T 150 C J = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR4 glass epoxy printed circuit board using minimum ORDERING INFORMATION recommended footprint. Device Package Shipping THERMAL CHARACTERISTICS PZT751T1G SOT223 1,000 / Tape & Reel Rating Symbol Value Unit (PbFree) Thermal Resistance from Junctionto R 156 C/W JA SPZT751T1G SOT223 1,000 / Tape & Reel Ambient in Free Air (PbFree) Maximum Temperature for Soldering T 260 C L For information on tape and reel specifications, Purposes including part orientation and tape sizes, please Time in Solder Bath 10 Sec refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 9 PZT751T1/DPZT751 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B CollectorEmitter Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C BaseEmitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB CollectorBase Cutoff Current I nAdc CBO (V = 80 Vdc, I = 0) 100 CB E ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 50 mAdc, V = 2.0 Vdc) 75 C CE (I = 500 mAdc, V = 2.0 Vdc) 75 C CE (I = 1.0 Adc, V = 2.0 Vdc) 75 C CE (I = 2.0 Adc, V = 2.0 Vdc) 40 C CE CollectorEmitter Saturation Voltages V Vdc CE(sat) (I = 2.0 Adc, I = 200 mAdc) 0.5 C B (I = 1.0 Adc, I = 100 mAdc) 0.3 C B BaseEmitter Voltages V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 Adc, I = 100 mAdc) 1.2 C B CurrentGainBandwidth f MHz T (I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz) 75 C CE 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. www.onsemi.com 2