X-On Electronics has gained recognition as a prominent supplier of SPZT751T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SPZT751T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SPZT751T1G ON Semiconductor

SPZT751T1G electronic component of ON Semiconductor
SPZT751T1G ON Semiconductor
SPZT751T1G Bipolar Transistors - BJT
SPZT751T1G  Semiconductors

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See Product Specifications
Part No. SPZT751T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT
Datasheet: SPZT751T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.45 ea
Line Total: USD 1.45 
Availability - 1437
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
599
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0782
10 : USD 0.8828
30 : USD 0.5887
100 : USD 0.4658
500 : USD 0.4254
1000 : USD 0.4053

1437
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.45
10 : USD 0.8664
100 : USD 0.5368
500 : USD 0.4411
1000 : USD 0.4037
2000 : USD 0.3652
5000 : USD 0.3586
10000 : USD 0.3443

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SPZT751T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPZT751T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PZT751 PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface www.onsemi.com mount applications. Features SOT223 PACKAGE HIGH CURRENT High Current NPN SILICON TRANSISTOR The SOT223 Package can be soldered using wave or reflow. SURFACE MOUNT SOT223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of 4 Soldered Joints. The Formed Leads Absorb Thermal Stress During 1 Soldering, Eliminating the Possibility of Damage to the Die 2 3 NPN Complement is PZT651T1G SOT223 CASE 318E S Prefix for Automotive and Other Applications Requiring Unique STYLE 1 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 2, 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* BASE 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) C EMITTER 3 Rating Symbol Value Unit CollectorEmitter Voltage V 60 Vdc CEO MARKING DIAGRAM CollectorBase Voltage V 80 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO AYW ZT751 Collector Current I 2.0 Adc C Total Power Dissipation P W D 1 T = 25C (Note 1) 0.8 mW/C A Derate above 25C 6.4 A = Assembly Location Y = Year Storage Temperature Range T 65 to 150 C stg W = Work Week Junction Temperature T 150 C J = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR4 glass epoxy printed circuit board using minimum ORDERING INFORMATION recommended footprint. Device Package Shipping THERMAL CHARACTERISTICS PZT751T1G SOT223 1,000 / Tape & Reel Rating Symbol Value Unit (PbFree) Thermal Resistance from Junctionto R 156 C/W JA SPZT751T1G SOT223 1,000 / Tape & Reel Ambient in Free Air (PbFree) Maximum Temperature for Soldering T 260 C L For information on tape and reel specifications, Purposes including part orientation and tape sizes, please Time in Solder Bath 10 Sec refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 9 PZT751T1/DPZT751 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B CollectorEmitter Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C BaseEmitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB CollectorBase Cutoff Current I nAdc CBO (V = 80 Vdc, I = 0) 100 CB E ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 50 mAdc, V = 2.0 Vdc) 75 C CE (I = 500 mAdc, V = 2.0 Vdc) 75 C CE (I = 1.0 Adc, V = 2.0 Vdc) 75 C CE (I = 2.0 Adc, V = 2.0 Vdc) 40 C CE CollectorEmitter Saturation Voltages V Vdc CE(sat) (I = 2.0 Adc, I = 200 mAdc) 0.5 C B (I = 1.0 Adc, I = 100 mAdc) 0.3 C B BaseEmitter Voltages V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 Adc, I = 100 mAdc) 1.2 C B CurrentGainBandwidth f MHz T (I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz) 75 C CE 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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