Surface Mount Schottky Barrier Rectifiers 1 A, 20 V - 150 V SS12FP - S115FP Features www.onsemi.com Larger Cathode Pad for Improved Power Dissipation Ultra Thin Profile Package Height < 1.0 mm 2 High Surge Current Capability 2 Low Power Loss, High Efficiency UL Flammability 94V0 Classification 1 1 MSL 1 per JSTD020 Band Indicates Cathode AECQ101 Qualified SOD123EP These Devices are PbFree and are RoHS Compliant CASE 425AC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Value SS12 SS13 SS14 SS16 S110 S115 FP FP FP FP FP FP Symbol Parameter Unit 12 V Repetitive 20 30 40 60 100 150 V RRM Peak Cathode Anode Reverse Voltage V RMS 14 21 28 42 70 105 V RMS Reverse Voltage MARKING DIAGRAM V DC 20 30 40 60 100 150 V R Blocking Voltage I Average Forward 1 A F(AV) Rectified Current &Y 1 2 &ZXFP&G I Peak Forward 30 A FSM Surge Current: 8.3 ms Single Half SineWave Superimposed on Rated Load &Y = Binary Calendar Year Coding T Operating 55 to +125 55 to +150 C J &Z = Assembly Plant Code Junction XFP = Specific Device Code Temperature Range X = 0, 2, 3, 4, 6, A &G = Single Digit Week Code T Storage 55 to +150 C STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2021 Rev. 2 S110FP/DSS12FP S115FP THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 1) A Symbol Parameter Value Unit Thermal Characteristics, JunctiontoLead (Note 2) 10 C/W JL C/W R Thermal Resistance, JunctiontoAmbient 140 JA 1. Per JESD513 recommended thermal test board. Device mounted on FR4 PCB, board size = 76.2 mm x 114.3 mm. 2. Thermocouple soldered at cathode lead. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Value SS12 SS13 SS14 SS16 S110 S115 Symbol Parameter Conditions Unit FP FP FP FP FP FP V Maximum Instantaneous V I = 0.5 A 0.51 0.58 0.70 0.75 F F Forward Voltage (Note 3) I = 1.0 A 0.45 0.50 0.55 0.70 0.80 0.90 F I Maximum Reverse Current T = 25C 0.40 0.05 mA R J at Rated V R T = 125C 0.50 J C Typical Junction Capacitance V = 4 V, 54 28 pF J R f = 1 MHz Trr Typical Reverse Recovery Time I = 0.5 A, 6 14 ns F I = 1 A, R I = 0.25 A RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse test with PW = 300 s, 1% duty cycle. ORDERING INFORMATION Part Number Device Code Marking Package Packing Method SS12FP 2FP SOD123EP Tape and Reel SS13FP 3FP SOD123EP Tape and Reel SS14FP 4FP SOD123EP Tape and Reel SS16FP 6FP SOD123EP Tape and Reel S110FP 0FP SOD123EP Tape and Reel S115FP AFP SOD123EP Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2