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STK551U362A-E Intelligent Power Module (IPM) 600 V, 10 A Overview This Inverter Power IPM is highly integrated device containing all High www.onsemi.com Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In line Package). Output stage uses IGBT / FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive. Function Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit All control input and status output are at low voltage levels directly compatible with microcontrollers Built-in dead time for shoot-thru protection Externally accessible embedded thermistor for substrate temperature measurement The level of the over-current protection current is adjustable with the external resistor, RSD Certification UL1557 (File Number : E339285) Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Conditions Ratings Unit V Supply voltage V+ to V-, surge < 500 V *1 450 V CC V Collector-emitter voltage V+ to U, V, W or U, V, W to V- 600 V CE V+, V-, U, V, W terminal current 10 A Output current Io V+, V-, U, V, W terminal current at Tc = 100C 5 A Output peak current Iop V+, V-, U, V, W terminal current for a Pulse width of 1ms. 20 A Pre-driver voltage VD1,2,3,4 VB1 to U, VB2 to V, VB3 to W, V to V *2 20 V DD SS 0.3 to V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 V DD FAULT terminal voltage VFAULT FAULT terminal 0.3 to V V DD Maximum power dissipation Pd IGBT per channel 30 W Junction temperature Tj IGBT, FRD 150 C Storage temperature Tstg 40 to +125 C Operating case temperature Tc IPM case temperature 40 to +100 C Tightening torque Case mounting screws *3 1.0 Nm Withstand voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS Reference voltage is V terminal voltage unless otherwise specified. SS *1: Surge voltage developed by the switching operation due to the wiring inductance between + and U-(V-, W-) terminal. *2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V to V DD SS *3: Flatness of the heat-sink should be 0.15 mm and below. *4: Test conditions : AC 2500 V, 1 second. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 15 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : December 2016 - Rev. 2 STK551U362A-E/D