Ordering number : ENA1589A STK672-642A-E Thick-Film Hybrid IC STK672-642A-E Specifications Absolute Maximum Ratings at Tc = 25C Parameter Symbol Conditions Ratings unit Maximum supply voltage 1 V max No signal 52 V CC Maximum supply voltage 2 V max No signal -0.3 to +6.0 V DD Input voltage V max Logic input pins -0.3 to +6.0 V IN Output current 1 I max 10A, 1 pulse (resistance load) 20 A OP Output current 2 I max V =5V, CLOCK200Hz 4A OH DD Output current 3 I max Pin16 output current 10 mA OF Allowable power dissipation 1 PdMF max With an arbitrarily large heat sink. Per MOSFET 8.3 W Allowable power dissipation 2 PdPK max No heat sink 2.8 W Operating substrate temperature Tc max 105 C Junction temperature Tj max 150 C Storage temperature Tstg -40 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Allowable Operating Ranges at Ta=25C Parameter Symbol Conditions Ratings unit Operating supply voltage 1 V With signals applied 10 to 42 V CC Operating supply voltage 2 V With signals applied 55% V DD Input high voltage V Pins 10, 12, 13, 14, 15, 17 2.5 to V V IH DD Input low voltage V Pins 10, 12, 13, 14, 15, 17 0 to 0.8 V IL Output current 1 I1 Tc=105C, CLOCK200Hz, OH 3.0 A Continuous operation, duty=100% Output current 2 I2 Tc=80C, CLOCK200Hz, OH Continuous operation, duty=100%, 3.3 A See the motor current (I ) derating curve OH CLOCK frequency f Minimum pulse width: at least 10s 0 to 50 kHz CL Phase driver withstand voltage V I =1mA (Tc=25C) 100min V DSS D Recommended operating Tc No condensation 0 to 105 C substrate temperature Recommended Vref range Vref Tc=105C 0.14 to 1.31 V Refer to the graph for each conduction-period tolerance range for the output current and brake current. Electrical Characteristics at Tc=25C, V =24V, V =5.0V CC DD Parameter Symbol Conditions min typ max unit V supply current I Pin 9 current CLOCK=GND 4.4 8mA DD CCO Output average current Ioave R/L=1/0.62mH in each phase 0.519 0.625 0.731 A FET diode forward voltage Vdf If=1A (R =23) 0.83 1.5 V L Output saturation voltage Vsat R =23 0.20 0.33 V L Input high voltage V Pins 10, 12, 13, 14, 15, 17 2.5 V IH Input low voltage V Pins 10, 12, 13, 14, 15, 17 0.8 V IL FAULT low output voltage V Pin 16 (I =5mA) 0.25 0.5 V OLF O 5V level FAULT leakage current I Pin 16=5V 10 A ILF 5V level input current I Pins 10, 12, 13, 14, 15, 17=5V 50 75 A ILH GND level input current I Pins 10, 12, 13, 14, 15, 17=GND 10 A ILL Vref input bias current I Pin 19=1.0V 10 15 A IB PWM frequency fc 29 45 61kHz Overheat detection temperature TSD Design guarantee 144 C *Ioave values are for when the lead frame of the product is soldered to the mounting substrate. Notes: A fixed-voltage power supply must be used. No. A1589-2/21