Product Information

SZNZL5V6AXV3T1G

SZNZL5V6AXV3T1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes SC-89 3 EUT SNGL CP R PBF

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7103 ea
Line Total: USD 0.71

1261 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1197 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SZNZL5V6AXV3T1G
ON Semiconductor

1 : USD 0.4903
10 : USD 0.3405
100 : USD 0.1726
1000 : USD 0.1075
3000 : USD 0.0917
9000 : USD 0.0785
24000 : USD 0.0761
45000 : USD 0.0688
99000 : USD 0.0676

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
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NZL5V6AXV3T1 Series ESD Protection Diode Dual Common Anode These dual monolithic silicon ESD protection diodes are intended for use in voltage and ESD sensitive equipment such as computers, www.onsemi.com printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These 1 PIN 1. CATHODE devices are ideal for situations where board space is at a premium. 3 2. CATHODE 2 3. ANODE Specification Features: MARKING SC89 Package Allows Either Two Separate Unidirectional DIAGRAM Configurations or a Single Bidirectional Configuration 3 ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Lx SC89 Meets IEC6100042 Level 4 CASE 463C Low Leakage < 5.0 A STYLE 4 1 2 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and L = Device Code x = Specific Device PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS = PbFree Package Compliant (Note: Microdot may be in either location) Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, Transfer-molded, Thermosetting Plastic Epoxy Meets UL 94, V0 Device Package Shipping NZL5V6AXV3T1G SC89 3000/Tape & Reel LEAD FINISH: 100% Matte Sn (Tin) SZNZL5V6AXV3T1G SC89 3000/Tape & Reel MOUNTING POSITION: Any NZL6V8AXV3T1G SC89 3000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: SZNZL6V8AXV3T1G SC89 3000/Tape & Reel 260C Device Meets MSL 1 Requirements NZL6V8AXV3T3G SC89 10000/Tape & Reel SZNZL6V8AXV3T3G SC89 10000/Tape & Reel NZL7V5AXV3T1G SC89 3000/Tape & Reel SZNZL7V5AXV3T1G SC89 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2018 Rev. 7 NZL5V6AXV3T1/D MNZL5V6AXV3T1 Series MAXIMUM RATINGS Rating Symbol Value Unit Total Power Dissipation on FR5 Board (Note 1) T = 25C P 240 mW A D Derate above 25C 1.9 mW/C Thermal Resistance Junction to Ambient R 525 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum (10 Second Duration) T 260 C L IEC6100042 Contact ESD 10 kV IEC6100042 Air 10 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 board with minimum recommended mounting pad. *Other voltages may be available upon request. ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V C BR RWM V I V V Breakdown Voltage I R F BR T I T I Test Current T I Forward Current F V Forward Voltage I F F I PP UniDirectional Zener ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max I = 10 mA for all types) A F F UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) Breakdown Voltage Surge V (V) C I = 1.0 V (V) Max I P I PP C PP pk R A Max I (A) (W) V V (Note 2) (V) Iz V BR T PP RWM RWM Device Marking V A Min Nom Max mA Typ Max Typ Device NZL5V6AXV3T1 L0 3.0 5.0 5.32 5.6 5.88 5.0 7.0 10.1 4.8 50 NZL6V8AXV3T1 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL6V8AXV3T3 L2 4.5 1.0 6.46 6.8 7.14 5.0 7.9 11.9 6.7 73 NZL7V5AXV3T1 L3 5.0 1.0 7.12 7.5 7.88 5.0 8.8 13.5 5.7 75 2. V measured at pulse test current I at an ambient temperature of 25C. BR T Surge current waveform per Figure 5. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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