Product Information

SZP6SMB51AT3G

SZP6SMB51AT3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diodes - Transient Voltage Suppressors ZEN SMB TVS 600W 51V TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8415 ea
Line Total: USD 0.84

1415 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3253 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

SZP6SMB51AT3G
ON Semiconductor

1 : USD 0.6051
10 : USD 0.5292
100 : USD 0.369
500 : USD 0.2871
1000 : USD 0.2349
2500 : USD 0.1732
10000 : USD 0.1709

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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TVS Diodes Datasheet SZP6SMB Series Surface Mount > 600W Pb RoHS e3 Description Bi-directional The SZP6SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low breakdown impedance and fast response time. The SZP6SMB series is supplied in the Littelfuse exclusive, cost-effective, highly reliable package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Uni-directional Features Zener Transient Overvoltage Low Leakage < 5 A Above Suppressors 10 V Additional Information Working Peak Reverse Response Time is Typically Voltage Range 5.8 to 171 < 1 ns V (for Uni-directional), 9.4 to Pb-free means 2nd level 70.1 V (for Bi-directional) interconnect is Pb-free and Standard Breakdown Voltage the terminal finish material is Range 6.45 to 210V for Uni- tin(Sn) (IPC/JEDEC J-STD- directional , 10.5 to 86.1V for 609A.01) Resources Accessories Samples Bi-directional SZ P refix for Automotive and Peak Power 600 W 1 ms Other Applications Requiring Unique Site and Control ESD Rating of Class 3 (> 16 Change Requirements AEC kV) per Human Body Model Q101 Qualified and PPAP Maximum Clamp Voltage Capable Peak Pulse Current Maximum Ratings and Thermal Characteristics Parameter Symbol Value Unit Agency Approvals Peak Power Dissipation (Note 1) P 600 W PK T = 25C, Pulse Width = 1 ms Agency Agency File/Certificate Number L DC Power Dissipation T = 75C L Measured Zero Lead Length (Note 2) P 3.0 W E128662 D Derate Above 75C 40 mW/C Thermal Resistance from R 25 C/W JL JunctiontoLead DC Power Dissipation (Note 3) P 0.55 W D T = 25C Derate Above 25C A Functional Diagram 4.4 mW/C Thermal Resistance from R 226 C/W JA Junctionto Ambient Forward Surge Current (Note 4) I 100 A FSM T = 25C A Bi-directional Operating and Storage Temperature -65 to T T C J, stg Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the component. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Cathode Anode 1. 10/1000 s, nonrepetitive. 2. 1 square copper pad, FR4 board. Uni-directional 3. FR4 board, using Littelfuse minimum recommended footprint 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. For Unidirectonal only. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 01/08/21TVS Diodes Datasheet SZP6SMB Series Surface Mount > 600W I-V Curve Characteristics (T = 25C unless otherwise noted, VF = 3.5 V Max. IF (Note 5) = A 30 A) For Uni-directional Symbol Parameter Uni-directional I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V V V Breakdown Voltage I c BR R BR T V I V R F I On-State Current T I T V Forward Voltage I F F I Forward Current F 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, nonrepetitive duty cycle. I PP I-V Curve Characteristics (T = 25C unless otherwise noted) For Bi-directional A Symbol Parameter Bi-Directional I Maximum Reverse Peak Pulse Current I PP PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM I T V Breakdown Voltage I V V V I c BR R R BR T V I V V V I Test Current R R BR C T I T I PP 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 01/08/21

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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