ULN2003ADR2G ON Semiconductor

ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage ULN2003A, ULQ2003A MAXIMUM RATINGS (T = 25C, and rating apply to any one device in the package, unless otherwise noted.) A Rating Symbol Value Unit Output Voltage V 50 V O Input Voltage V 30 V I Collector Current - Continuous I 500 mA C Base Current - Continuous I 25 mA B Operating Ambient Temperature Range T C A ULN2003A -20 to +85 ULQ2003A -40 to +85 Storage Temperature Range T -55 to +150 C stg Junction Temperature T 150 C J Thermal Resistance, Junction-to-Ambient R C/W JA Case 751B, D Suffix 100 Thermal Resistance, Junction-to-Case R C/W JC Case 751B, D Suffix 20 Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 2000 Machine Model (MM) 400 Charged Device Model (CDM) 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.