Product Information

WPB4001-1E

WPB4001-1E electronic component of ON Semiconductor

Datasheet
Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-3P Tube

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1867 ea
Line Total: USD 1.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

WPB4001-1E
ON Semiconductor

1 : USD 1.1867
25 : USD 0.6524
100 : USD 0.4557
500 : USD 0.438
1000 : USD 0.4225
2500 : USD 0.407

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 410
Multiples : 1

Stock Image

WPB4001-1E
ON Semiconductor

410 : USD 0.495
500 : USD 0.4568
1000 : USD 0.4406
2500 : USD 0.4244

     
Manufacturer
Product Category
Packaging
Channel Mode
Operating Temp Range
Pin Count
Number Of Elements
Package Type
Continuous Drain Current
Operating Temperature Classification
Power Dissipation
Rad Hardened
Polarity
Type
Gate-Source Voltage Max
Drain-Source On-Volt
Mounting
LoadingGif

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Ordering number : ENA2212 WPB4001 N-Channel Power MOSFET Crss t (off) d Coss Ciss WPB4001 I -- V I -- V (off) D DS D GS 80 90 Tc=25C V =20V DS 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 V =6V GS 0 0 05210 15 205 300121416802 146 IT17181 IT17182 Drain to Source Voltage, V -- V Gate to Source Voltage, V -- V DS GS R (on) -- V R (on) -- Tc DS GS DS 1.0 0.6 I =13A Single pulse D 0.9 Single pulse 0.5 0.8 0.7 0.4 0.6 0.5 0.3 0.4 Tc=75C 0.2 0.3 25C 0.2 --25C 0.1 0.1 0 0 5687 9 10 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT17183 Case Temperature, Tc -- C IT17184 GS I -- V yfs -- I S SD D 5 7 5 V =10V V =0V DS GS 3 3 Single pulse 2 2 10 7 5 10 3 7 2 5 1.0 7 3 5 3 2 2 0.1 1.0 7 5 7 3 5 2 0.01 3 57 23 5 7 23 5 7 23 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10 100 Drain Current, I -- A IT17250 Diode Forward Voltage, V -- V IT17186 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 1K 10K V =200V f=1MHz DD 7 7 V =10V GS 5 5 3 2 3 1K 2 7 5 100 3 2 7 t (on) d 5 100 5 3 3 2 2 23 5 7 23557 2 3 05210 15 205 3035 40 45 50 0.1 1.0 10 Drain Current, I -- A IT17187 IT17188 Drain to Source Voltage, V -- V D DS No. A2212-2/5 75C 8V Tc= --25C 25C 15V 10V 25C V =10V, I =13A GS D t r 75C Tc= --25C Tc=75C t f 25C --25C Static Drain to Source Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S On-State Resistance, R (on) -- Drain Current, I -- A DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A On-State Resistance, R (on) -- Drain Current, I -- A S DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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