OSB5SA6EE2A is a 6 Amp low saturation, low noise, medium power N-channel MOSFET transistor. Designed for load switching circuits, this MOSFET features an MPQ package with standard gate threshold voltage of 5V, low gate input capacitance, and maximum drain source voltage of 600V. Additionally, the excellent thermal properties and low package inductance make it ideal for high frequency switching applications.