Product Information

SFH 4451-V

SFH 4451-V electronic component of Osram

Datasheet
Infrared Emitters - High Power Infrared Mini-MIDLED

Manufacturer: Osram
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 6000
Multiples : 3000
6000 : USD 0.3302
9000 : USD 0.3103
N/A

Obsolete
0 - WHS 2

MOQ : 6000
Multiples : 6000
6000 : USD 0.4041
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 1.3914
10 : USD 0.8972
100 : USD 0.5443
500 : USD 0.509
1000 : USD 0.441
3000 : USD 0.401
24000 : USD 0.3961
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 0.4151
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Viewing Angle
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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2016-09-23 Narrow beam LED in Mini MIDLED package (850 nm) Version 1.4 SFH 4451 Features: Highly Efficient Infrared LED Short switching times Narrow halfangle (+-17) Low profile component Applications Sensor technology For control and drive circuits Proximity sensor Mobile devices Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I [mW/sr] e I = 100 mA, t = 20 ms F p SFH 4451 70 ( 25) Q65111A2583 SFH 4451-UV 40 ... 125 Q65111A4223 SFH 4451-V 63 ... 125 Q65111A6962 Note: Measured at a solid angle of = 0.01 sr 2016-09-23 1Version 1.4 SFH 4451 Maximum Ratings (T = 25 C) A Parameter Symbol Values Unit Operation and storage temperature range T ; T -40 ... 85 C op stg Reverse voltage V 5 V R Forward current I 100 mA F Surge current I 1 A FSM (t = 300 s, D = 0) p Power consumption P 180 mW tot ESD withstand voltage V 2 kV ESD (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 12 Thermal resistance junction - ambient R 400 K / W thJA Thermal resistance junction - soldering point R 200 K / W thJS 2) page 12 Characteristics (T = 25 C) A Parameter Symbol Values Unit Peak wavelength (typ) 860 nm peak (I = 100 mA, t = 20 ms) F p Centroid wavelength (typ) 850 nm centroid (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max (I = 100 mA, t = 20 ms) F p Half angle (typ) 17 Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I ( 10% and 90% of I ) (typ) t , t 12 ns e e max r f (I = 100 mA, R = 50 ) F L Forward voltage (typ (max)) V 1.5 ( 1.8) V F (I = 100 mA, t = 20 ms) F p Forward voltage (typ (max)) V 2.4 ( 3) V F (I = 1 A, t = 100 s) F p Reverse current I not designed for A R (V = 5 V) reverse operation R Total radiant flux (typ) 55 mW e (I =100 mA, t =20 ms) F p 2016-09-23 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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