This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1034, 2SA1035 Silicon PNP epitaxial planar type Unit: mm For low-frequency and low-noise amplification +0.10 0.40 0.05 +0.10 0.16 Complementary to 2SC2405, 2SC2406 0.06 3 Features Low noise voltage NV High forward current transfer ratio h FE 1 2 Mini type package, allowing downsizing of the equipment and automatic (0.95) (0.95) insertion through the tape packing and the magazine packing 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit 2SA1034 V 35 V Collector-base voltage CBO 1: Base (Emitter open) 2SA1035 55 2: Emitter 2SA1034 V 35 V 3: Collector Collector-emitter voltage CEO EIAJ: SC-59 (Base open) 2SA1035 55 Mini3-G1 Package Emitter-base voltage (Collector open) V 5V EBO Marking Symbol: Collector current I 50 mA C 2SA1034: F Peak collector current I 100 mA CP 2SA1035: H Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit 2SA1034 V I = 10 A, I = 0 35 V Collector-base voltage CBO C E (Emitter open) 2SA1035 55 2SA1034 V I = 2 mA, I = 0 35 V Collector-emitter voltage CEO C B (Base open) 2SA1035 55 Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C 1 * Base-emitter voltage V V = 1 V, I = 100 mA 0.7 1.0 V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 1 A CEO CE B 2 * Forward current transfer ratio h V = 5 V, I = 2 mA 180 700 FE CE C 1 * Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.6 V CE(sat) C B Transition frequency f V = 5 V, I = 2 mA, f = 200 MHz 200 MHz T CB E Noise voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S T h 180 to 360 260 to 520 360 to 700 FE Publication date: January 2003 SJC00010BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1034, 2SA1035 P T I V I I C a C CE C B 160 240 160 T = 25C a V = 5 V CE T = 25C a 140 140 200 I = 350 A B 120 120 300 A 160 250 A 100 100 200 A 80 120 80 150 A 60 60 100 A 80 40 40 50 A 40 20 20 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Base current I (mA) Ambient temperature T (C) Collector-emitter voltage V (V) B a CE I V I V V I B BE C BE CE(sat) C 800 120 100 I / I = 10 V = 5 V C B CE V = 5 V CE T = 25C a 700 25C 100 T = 75C a 25C 600 10 80 500 400 60 1 300 T = 75C a 40 25C 200 0.1 25C 20 100 0 0 0.01 0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 ( ) Base-emitter voltage V V Base-emitter voltage V (V) Collector current I (mA) BE BE C h I f I C V FE C T E ob CB 20 600 500 V = 5 V CB V = 5 V CE I = 0 E T = 25C a 18 f = 1 MHz T = 25C a 500 400 16 T = 75C a 14 400 25C 300 12 300 10 25C 8 200 200 6 100 4 100 2 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 ( ) ( ) ( ) Collector current I mA Emitter current I mA Collector-base voltage V V C E CB 2 SJC00010BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.