X-On Electronics has gained recognition as a prominent supplier of 2SA16740SA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA16740SA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA16740SA Panasonic

2SA16740SA electronic component of Panasonic
2SA16740SA Panasonic
2SA16740SA Bipolar Transistors - BJT
2SA16740SA  Semiconductors

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See Product Specifications
Part No. 2SA16740SA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 80V 1A MT-2
Datasheet: 2SA16740SA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.2153 ea
Line Total: USD 430.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 2000
Multiples : 2000
2000 : USD 0.2153

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4595
10 : USD 0.3487
100 : USD 0.2887
500 : USD 0.2642
1000 : USD 0.2555

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SA16740SA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA16740SA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 6.90.1 2.50.1 Complementary to 2SC4391 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage V 0.65 max. CE(sat) High collector-emitter voltage (Base open) V CEO Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 80 V +0.10 +0.10 CBO 0.45 0.45 0.05 0.05 1.050.05 Collector-emitter voltage (Base open) V 80 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 5V EBO 1: Emitter 2: Collector Collector current I 1A C 123 3: Base Peak collector current I 1.5 A CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Printed circuit board: Copper foil area of 1 cm or more, and the * board thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 80 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 80 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 40 V, I = 0 0.1 A CBO CB E 2 * Forward current transfer ratio h V = 2 V, I = 100 mA 120 340 FE1 CE C 1 * h V = 2 V, I = 500 mA 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.3 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 15 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank R S h 120 to 240 170 to 340 FE1 Publication date: March 2003 SJC00025BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1674 P T I V V I C a C CE CE(sat) C 1.2 1.2 10 I / I = 10 C B Copper plate at the collector T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 1.0 1.0 I = 8 mA B 7 mA 1 6 mA 0.8 0.8 5 mA T = 75C a 4 mA 25C 0.6 0.6 0.1 3 mA 25C 0.4 0.4 2 mA 0.01 0.2 0.2 1 mA 0 0 0.001 0 2 4 6 8 10 0 40 80 120 160 0.01 0.1 1 10 ( ) Ambient temperature T (C) Collector-emitter voltage V V Collector current I (A) a CE C V I h I f I BE(sat) C FE C T E 100 500 200 I / I = 10 V = 10 V C B CB V = 2 V CE T = 25C a 400 160 10 300 120 T = 75C T = 25C a a 25C 1 75C 25C 200 80 25C 0.1 100 40 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 Collector current I (A) Collector current I (A) Emitter current I (mA) C C E C V ob CB 60 I = 0 E f = 1 MHz T = 25C a 50 40 30 20 10 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00025BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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