X-On Electronics has gained recognition as a prominent supplier of 2SA20670PA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA20670PA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA20670PA Panasonic

2SA20670PA electronic component of Panasonic
2SA20670PA Panasonic
2SA20670PA Bipolar Transistors - BJT
2SA20670PA  Semiconductors

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See Product Specifications
Part No. 2SA20670PA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 60V 3A MT-4
Datasheet: 2SA20670PA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.645 ea
Line Total: USD 0.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.4378

0
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.645
10 : USD 0.5488
25 : USD 0.5155
100 : USD 0.4675
500 : USD 0.4378

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SA20670PA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA20670PA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SA2067 Silicon PNP epitaxial planar type Unit: mm Power supply for audio & visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 High speed switching (t : storage time/t : fall time is short) stg f C 1.0 1.480.2 Low collector-emitter saturation voltage V CE(sat) 2.250.2 Superior forward current transfer ratio h linearity FE 0.650.1 0.650.1 Allowing automatic insertion eith radial taping 0.350.1 1.050.1 0.550.1 0.550.1 Absolute Maximum Ratings T = 25C C 2.50.2 2.50.2 Parameter Symbol Rating Unit 123 1 : Base Collector-base voltage (Emitter open) V 60 V CBO 2 : Collector Collector-emitter voltage (Base open) V 60 V 3 : Emitter CEO MT-4-A1 Package Emitter-base voltage (Collector open) V 6V EBO Collector current I 3A Internal Connection C Peak collector current I 6A CP C Collector power dissipation P 15 W C B T = 25C 2.0 a Junction temperature T 150 C j E Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 10 mA, I = 0 60 V CEO C B Collector-base cutoff current (Emitter open) I V = 60 V, I = 0 100 A CBO CB E Collector-emitter cutoff current (Base open) I V = 60 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 1mA EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 120 320 FE1 CE C h V = 4 V, I = 3 A 40 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 375 mA 0.8 V CE(sat) C B Transition frequency f V = 10 V, I = 0.1 A, f = 10 MHz 90 MHz T CE C Turn-on time t I = 1 A, Resistance loaded 0.3 s on C Storage time t I = 0.1 A, I = 0.1 A 0.7 s stg B1 B2 Fall time t V = 50 V 0.15 s f CC Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q P h 120 to 250 160 to 320 FE1 Publication date: January 2003 SJD00286BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2067 I V V I h I C BE CE(sat) C FE C 7 10 10 000 I / I = 8 T = 25C C B a V = 4 V V = 4 V CE CE 6 1 000 1 5 4 0.1 100 3 2 10 0.01 1 0 0.001 1 0 0.5 1.0 1.5 2.0 0.01 0.1 1 10 0.01 0.1 1 10 Base to emitter voltage V (V) Collector current I (A) Collector current I (A) BE C C Safe operation area 100 Non repetitive pulse T = 25C C 10 I t = 1 ms CP t = 10 ms I C t = 1 s 1 0.1 0.01 1 10 100 1 000 Collector to emitter voltage V (V) CE 2 SJD00286BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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