This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 7.50.2 4.50.2 Features High forward current transfer ratio h FE 0.650.1 0.850.1 Allowing supply with the radial taping 0.8 C 0.8 C 1.00.1 0.70.1 0.70.1 1.150.2 Absolute Maximum Ratings T = 25C a 1.150.2 Parameter Symbol Rating Unit 0.50.1 0.40.1 Collector-base voltage (Emitter open) V 120 V CBO Collector-emitter voltage (Base open) V 100 V CEO 0.8 C 1 23 Emitter-base voltage (Collector open) V 5V EBO 1: Emitter 2: Collector Collector current I 2A C 2.50.2 2.50.2 3: Base Peak collector current I 3A CP MT-3-A1 Package Collector power dissipation P 1.5 W C Internal Connection Junction temperature T 150 C j C Storage temperature T 55 to +150 C stg B E 200 Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 100 A, I = 0 120 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 100 V CEO C B Emitter-base voltage (Collector open) V I = 100 A, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 0.1 A CBO CB E Emitter-base cutoff current (Collector open) I V = 4 V, I = 01 A EBO EB C 1, 2 * Forward current transfer ratio h V = 10 V, I = 1 A 4 000 40 000 FE CE C 1 * Collector-emitter saturation voltage V I = 1 A, I = 1 mA 1.5 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 1 A, I = 1 mA 2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R S h 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 FE Publication date: February 2003 SJD00269BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2479 P T I V I V C a C CE C BE 1.6 1.2 T = 25C a V = 10 V CE I = 1.0 mA B 4 0.9 mA 0.8 mA 0.7 mA 1.2 T = 85C a 0.6 mA 0.8 3 0.5 mA 25C 0.4 mA 0.8 0.3 mA 2 25C 0.4 0.2 mA 0.4 1 0.1 mA 0 0 0 012148602 012 3 0 40 80 120 160 Collector-emitter voltage V (V) Base-emitter voltage V (V) Ambient temperature T (C) CE BE a V I V I h I BE(sat) C CE(sat) C FE C 10 100 10 000 I / I = 1 000 I / I = 1 000 C B C B V = 10 V CE 8 000 T = 85C a T = 85C a 10 T = 25C a 6 000 25C 25C 25C 1 85C 4 000 25C 1 25C 2 000 0.1 0.1 0 2 3 4 2 3 4 2 3 4 1 10 10 10 10 1 10 10 10 10 110 10 10 10 Collector current I (A) ( ) Collector current I A Collector current I (A) C C C C V ob CB 1 000 f = 1 MHz T = 25C a 100 10 010 20 30 40 Collector-base voltage V (V) CB SJD00269BED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.