DA4X101F0R

Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R DA4X101F0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits (0.95)(0.95) 0.13 4 3 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.65 0.4 1.1 Marking Symbol: 22 (0.2) 1.9 Basic Part Number : Dual DA2J101 (Parrarel, oppositely arranged) Packaging 1. Anode 1 3. Anode 2 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 2. Cathode 2 4. Cathode 1 Panasonic Mini4-G4-B JEITA SC-61AB Code TO-253/SOT-143 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 4 3 Forward current Single 100 IF(AV) mA (Average) Double 75 Repetitive peak Single 225 IFRM mA forward current Double 170 Non-repetitive peak Single 500 IFSM mA *1 Double 375 forward surge current 1 2 Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C Note) *1: t = 1 s Page 1 of 4 Established : 2009-11-26 Revised : 2013-06-19 1.5 2.8Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.95 1.20 V Reverse voltage VR IR = 100 A 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 0.9 2.0 pF IF = 10 mA , VR = 6 V *1 trr 3 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2009-11-26 Revised : 2013-06-19